onsemi Single Bipolar Transistors MJE181

Bipolar (BJT) Transistor NPN 60V 3A 50MHz 12.5W Through Hole TO-126

Manufacturer: ON Semiconductor
Win Source Part Number: 1223715-MJE181
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 50MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-225AA
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.mospec.com.tw
Manufacturer Package: TO-225AA, TO-126-3
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Family Part Number: MJE181
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1.7V at 600mA, 3A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 50 at 100mA, 1V
Maximum Power: 12.5W

TRANS NPN 60V 3A TO126 Product overview: MJE181 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE181 can be used for catalog matching and distributor lookup.