onsemi TRANSISTORS - Transistors (BJT) - Single - MJE180G MJE180G

Manufacturer: ON Semiconductor
Win Source Part Number: 1223714-MJE180G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 1.5W
Transistor Type: NPN
Frequency - Transition: 50MHz
Family Name: MJE180
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-225AA
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 40V
Vce Saturation (Maximum) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 100mA, 1V
Alternative Parts (Cross-Reference): MJE180 Lead Free; MJE180;
Introduction Date: February 14, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Bipolar (BJT) Transistor NPN 40V 3A 50MHz 1.5W Through Hole TO-126

NPN BJT Power Transistor 40V 3A TO-225 Product overview: MJE180G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE180G can be used for catalog matching and distributor lookup.