onsemi TO-220 Bipolar Transistor MJE18004D2G

Description
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: MJE18004D2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE18004D2G can be used for catalog matching and distributor lookup.
  • Single Bipolar Transistors - MJE18004D2G-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MJE18004D2G - 041665-MJE18004D2G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE18004D2G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: MJE18004D2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE18004D2G can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
TO-220 Bipolar Transistor
276-MJE18004D2G
TO-220 Bipolar Transistor 276-MJE18004D2G
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: MJE18004D2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE18004D2G can be used for catalog matching and distributor lookup.

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: MJE18004D2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE18004D2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - MJE18004D2G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE18004D2G-ND
Single Bipolar Transistors MJE18004D2G-ND
Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220

Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE18004D2G - 041665-MJE18004D2G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE18004D2G
041665-MJE18004D2G
TRANSISTORS - Transistors (BJT) - Single - MJE18004D2G 041665-MJE18004D2G
Manufacturer: ON Semiconductor Win Source Part Number: 041665-MJE18004D2G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 13MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 450V Max Vce (sat): 750mV @ 400mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 6 @ 2A, 1V Maximum Power Dissipation: 75W

Manufacturer: ON Semiconductor
Win Source Part Number: 041665-MJE18004D2G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 13MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 750mV @ 400mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 6 @ 2A, 1V
Maximum Power Dissipation: 75W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE18004D2G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE18004D2G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE18004D2G
TRANS NPN 450V 5A TO220

TRANS NPN 450V 5A TO220

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 276-MJE18004D2G MJE18004D2G-ND 041665-MJE18004D2G MJE18004D2G
Product Name TO-220 Bipolar Transistor Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJE18004D2G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
IC(max) 0.1000 milliamps 5000 milliamps
VCEO 450 volts 450 volts
VCBO 1000 volts
fT 13 MHz
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