onsemi TRANSISTORS - Transistors (BJT) - Single - MJE18004D2G MJE18004D2G

Manufacturer: ON Semiconductor
Win Source Part Number: 041665-MJE18004D2G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 13MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 750mV @ 400mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 6 @ 2A, 1V
Maximum Power Dissipation: 75W

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: MJE18004D2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE18004D2G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220