onsemi Single Bipolar Transistors MJE18004D2

Description
Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220
  • Single Bipolar Transistors - MJE18004D2-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MJE18004D2 - 116899-MJE18004D2 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE18004D2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - MJE18004D2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE18004D2-ND
Single Bipolar Transistors MJE18004D2-ND
Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220

Bipolar (BJT) Transistor NPN 450V 5A 13MHz 75W Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE18004D2 - 116899-MJE18004D2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE18004D2
116899-MJE18004D2
TRANSISTORS - Transistors (BJT) - Single - MJE18004D2 116899-MJE18004D2
Manufacturer: ON Semiconductor Win Source Part Number: 116899-MJE18004D2 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 13MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 450V Max Vce (sat): 750mV @ 400mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 6 @ 2A, 1V Maximum Power Dissipation: 75W

Manufacturer: ON Semiconductor
Win Source Part Number: 116899-MJE18004D2
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 13MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 750mV @ 400mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 6 @ 2A, 1V
Maximum Power Dissipation: 75W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE18004D2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE18004D2
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE18004D2
TRANS NPN 450V 5A TO220

TRANS NPN 450V 5A TO220

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MJE18004D2-ND 116899-MJE18004D2 MJE18004D2
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJE18004D2 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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