Manufacturer: ON Semiconductor
Win Source Part Number: 1223705-MJE170G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 1.5W
Transistor Type: PNP
Frequency - Transition: 50MHz
Family Name: MJE170
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-225AA
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 40V
Vce Saturation (Maximum) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 100mA, 1V
Alternative Parts (Cross-Reference): MJE170; MJE170 Lead Free;
Introduction Date: February 14, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
PNP BJT Transistor, 3A, 40V, 50MHz, TO-225 Product overview: MJE170G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 40V, 50MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 40V, 50MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJE170G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 40V 3A 50MHz 1.5W Through Hole TO-126
POWER TRANSISTOR, PNP, -40V, TO-225; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:3A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:-; MSL:- RoHS Compliant: Yes
TRANS PNP 40V 3A TO126
POWER TRANSISTOR, PNP, TO-225 40V 3PINS, THROUGH HOLE.. FREE 2 YEAR RADWELL WARRANTY
TRANS PNP 40V 3A TO126
Bipolar Transistors - BJT 3A 40V 12.5W PNP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1223705-MJE170G | 276-MJE170G | MJE170GOS-ND | 42K1289 | MJE170G | 18722908 | MJE170G | MJE170G |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - MJE170G | 3A 40V 50MHz Bipolar Transistor | Single Bipolar Transistors | Power Transistor, Pnp, -40V, To-225; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor | Single Bipolar Transistors | Bipolar Transistors - BJT |
| Polarity | PNP | PNP | PNP | PNP | PNP; PNP | |||
| Package Type | SOT3 | TO-225AA, TO-126-3 | TO-3 | TO-225AA, TO-126-3 | ||||
| Packing Method | Bulk; Bulk | Bulk; Bulk | ||||||
| TJ | -65 to 150 C (-85 to 302 F) | -65 C (-85 F) | -65 to 150 C (-85 to 302 F) | |||||
| Power Gain | 50 dB |
