onsemi Single Bipolar Transistors MJE15030

Description
Bipolar (BJT) Transistor NPN 150V 8A 30MHz 50W Through Hole TO-220
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 150V 8A 30MHz 50W Through Hole TO-220
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - MJE15030OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE15030OS-ND
Single Bipolar Transistors MJE15030OS-ND
Bipolar (BJT) Transistor NPN 150V 8A 30MHz 50W Through Hole TO-220

Bipolar (BJT) Transistor NPN 150V 8A 30MHz 50W Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJE15030 - 1223699-MJE15030 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJE15030
1223699-MJE15030
TRANSISTORS - Transistors (BJT) - Single - MJE15030 1223699-MJE15030
Manufacturer: ON Semiconductor Win Source Part Number: 1223699-MJE15030 Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 30MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 8A Voltage - Collector Emitter Breakdown (Maximum): 150V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 100mA, 1A DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 4A, 2V Maximum Power: 50W

Manufacturer: ON Semiconductor
Win Source Part Number: 1223699-MJE15030
Packaging: Tube
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 30MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.mospec.com.tw
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 8A
Voltage - Collector Emitter Breakdown (Maximum): 150V
Current - Collector Cutoff (Maximum): 100μA
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 100mA, 1A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 4A, 2V
Maximum Power: 50W

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE15030 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE15030
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE15030
TRANS NPN 150V 8A TO220

TRANS NPN 150V 8A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number MJE15030OS-ND 1223699-MJE15030 MJE15030
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJE15030 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-220; TO-220-3 TO-220; SOT3
Packing Method Tube; Tube Tube; Tube
TJ -65 to 150 C (-85 to 302 F)
Power Gain 20 dB
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