NPN Darlington Transistor 80V 4A DPAK 1.75W Product overview: MJD6039T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A, 1.75W, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, 1.75W, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD6039T4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 003646-MJD6039T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.5V @ 8mA, 2A
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 500 @ 2A, 4V
Maximum Power Dissipation: 1.75W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 1.75W Surface Mount DPAK
TRANS NPN DARL 80V 4A DPAK
TRANS NPN DARL 80V 4A DPAK
BIPOLAR TRANSISTOR, NPN, 80V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:-RoHS Compliant: Yes
DARLINGTON TRANSISTOR, NPN, 80V, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC Collector Current:4A; DC Current Gain hFE:1000hFE; Transistor Case RoHS Compliant: Yes
Darlington Transistors 2A 80V Bipolar Power NPN
TRANS NPN DARL 80V 4A DPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Darlington Transistors | Darlington Transistors | Bipolar RF Transistors |
| Product Number | 276-MJD6039T4G | 003646-MJD6039T4G | 488-MJD6039T4GTR-ND | MJD6039T4G | 26K4447 | 30AC9901 | MJD6039T4G | MJD6039T4G |
| Product Name | 80V 4A 1.75W DPAK Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - MJD6039T4G | Single Bipolar Transistors | Single Bipolar Transistors | Bipolar Transistor, Npn, 80V, Full Reel; Transistor Polarity Onsemi | Darlington Transistor, Npn, 80V, To-252; Transistor Polarity Onsemi | Darlington Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN - Darlington | NPN | NPN - Darlington; NPN | NPN | NPN | ||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | |||
| VCEO | 80 volts | 80 volts | 80 volts | 80 volts | ||||
| VCBO | 80 volts | |||||||
| PD | 1750 milliwatts | 20000 milliwatts | 20000 milliwatts |
