onsemi TRANSISTORS - Transistors (BJT) - Single - MJD5731T4 MJD5731T4

Description
Manufacturer: ON Semiconductor Win Source Part Number: 807778-MJD5731T4 Packaging: Reel Mounting Style: SMD Power - Max: 1.56W Transistor Type: PNP Frequency - Transition: 10MHz Part Status: Obsolete (End Of Life) Supplier Device Package: DPAK Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 200mA, 1A Part Number Series: MJD5731 DC Current Gain (hFE) (Min) at Ic, Vce: 30 at 300mA, 10V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 807778-MJD5731T4 Packaging: Reel Mounting Style: SMD Power - Max: 1.56W Transistor Type: PNP Frequency - Transition: 10MHz Part Status: Obsolete (End Of Life) Supplier Device Package: DPAK Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 200mA, 1A Part Number Series: MJD5731 DC Current Gain (hFE) (Min) at Ic, Vce: 30 at 300mA, 10V
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJD5731T4 - 807778-MJD5731T4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD5731T4
807778-MJD5731T4
TRANSISTORS - Transistors (BJT) - Single - MJD5731T4 807778-MJD5731T4
Manufacturer: ON Semiconductor Win Source Part Number: 807778-MJD5731T4 Packaging: Reel Mounting Style: SMD Power - Max: 1.56W Transistor Type: PNP Frequency - Transition: 10MHz Part Status: Obsolete (End Of Life) Supplier Device Package: DPAK Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 200mA, 1A Part Number Series: MJD5731 DC Current Gain (hFE) (Min) at Ic, Vce: 30 at 300mA, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 807778-MJD5731T4
Packaging: Reel
Mounting Style: SMD
Power - Max: 1.56W
Transistor Type: PNP
Frequency - Transition: 10MHz
Part Status: Obsolete (End Of Life)
Supplier Device Package: DPAK
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 350V
Current - Collector Cutoff (Maximum): 100μA
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1V at 200mA, 1A
Part Number Series: MJD5731
DC Current Gain (hFE) (Min) at Ic, Vce: 30 at 300mA, 10V

Buy Now
Single Bipolar Transistors - MJD5731T4-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD5731T4-ND
Single Bipolar Transistors MJD5731T4-ND
Bipolar (BJT) Transistor PNP 350V 1A 10MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor PNP 350V 1A 10MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD5731T4 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD5731T4
Single Bipolar Transistors MJD5731T4
TRANS PNP 350V 1A DPAK

TRANS PNP 350V 1A DPAK

Supplier's Site Datasheet
Singapore
350V 1A TO-252 Bipolar Transistor
276-MJD5731T4
350V 1A TO-252 Bipolar Transistor 276-MJD5731T4
350V PNP BJT Power Transistor, 1A, TO-252 Product overview: MJD5731T4 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 1A, TO-252. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 1A, TO-252, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD5731T4 can be used for catalog matching and distributor lookup.

350V PNP BJT Power Transistor, 1A, TO-252 Product overview: MJD5731T4 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 1A, TO-252. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 1A, TO-252, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD5731T4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD5731T4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD5731T4
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD5731T4
TRANS PNP 350V 1A DPAK

TRANS PNP 350V 1A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 807778-MJD5731T4 MJD5731T4-ND MJD5731T4 276-MJD5731T4 MJD5731T4
Product Name TRANSISTORS - Transistors (BJT) - Single - MJD5731T4 Single Bipolar Transistors Single Bipolar Transistors 350V 1A TO-252 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP PNP
Package Type SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Packing Method Tape Reel; Reel Tape Reel; Tape & Reel (TR)
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Power Gain 30 dB
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