The 10N9474 is a PNP power transistor designed for surface mount applications in a D-Pak package. It has a maximum collector-emitter voltage of 80V and can handle continuous collector currents up to 8A, with a peak collector current of 16A. The device features low collector-emitter saturation voltage and fast switching speeds, making it suitable for general-purpose power and switching applications, including output or driver stages in switching regulators and power amplifiers. The transistor is RoHS compliant and Pb-free, and it meets AEC-Q101 qualifications for automotive applications. The operating temperature range is from -55¬8C to +150¬8C, and it has a total power dissipation rating of 20W at a case temperature of 25¬8C.
PNP Power BJT | 8A, 80V | TO-252 DPAK Product overview: MJD45H11T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8A, 80V, TO-252. Search-friendly keywords include transistor, BJT, switching, amplification, 8A, 80V, TO-252, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD45H11T4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 003639-MJD45H11T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 90MHz
Transistor Polarity: PNP
Family Name: MJD45H11
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1V @ 400mA, 8A
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 40 @ 4A, 1V
Maximum Power Dissipation: 1.75W
Alternative Parts (Cross-Reference): MJD45H11RLG; MJD45H11G;
Introduction Date: December 10, 2001
ECCN: EAR99
Country of Origin: China, Malaysia, Vietnam
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Automotive, Signal Processing
Power 10A 80V PLA PNP, MJD45H11T4G
Power 10A 80V PLA PNP, MJD45H11T4G
Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Surface Mount DPAK
TRANS PNP 80V 8A DPAK
POWER BIPOLAR TRANSISTOR, 8A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, DPAK-3. FREE 2 YEAR RADWELL WARRANTY
TRANS PNP 80V 8A DPAK
80V 1.75W 40@4A,1V 8A PNP TO-252-2(DPAK) Bipolar Transistors - BJT ROHS
POWER TRANSISTOR, PNP, -80V, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:90MHz RoHS Compliant: Yes
POWER TRANSISTOR, PNP, -80V, D-PAK, FULL REEL; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Bipolar (BJT) Single Transistor, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 276-MJD45H11T4G | 003639-MJD45H11T4G | 1021371 | 463622P | MJD45H11T4GOSTR-ND | MJD45H11T4G | 18721453 | MJD45H11T4G | MJD45H11T4G | 10N9474 | 45J1495 | 90W4490 |
| Product Name | 8A 80V TO-252 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - MJD45H11T4G | Bipolar Transistors | Bipolar Transistors | Single Bipolar Transistors | Single Bipolar Transistors | Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT | Power Transistor, Pnp, -80V, D-Pak; Transistor Polarity Onsemi | Power Transistor, Pnp, -80V, D-Pak, Full Reel; Transistor Polarity Onsemi | Bipolar (Bjt) Single Transistor, Pnp, -80 V, 90 Mhz, 20 W, -8 A, 40 Rohs Compliant Onsemi |
| Polarity | PNP; PNP | PNP | PNP | PNP | PNP; PNP | PNP | PNP | PNP | PNP | |||
| Package Type | SOT3; DPAK-3 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | TO-3 | TO-3 | TO-3 | |||
| Number of units in IC | 1 | |||||||||||
| IC(max) | 8000 milliamps | 8000 milliamps | 8000 milliamps | |||||||||
| VCEO | 80 volts | 80 volts | 80 volts |
