onsemi Single Bipolar Transistors MJD45H11-001

Description
Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Through Hole I-PAK
  • Single Bipolar Transistors - MJD45H11-001OS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MJD45H11-001 - 1077397-MJD45H11-001 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD45H11-001 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Through Hole I-PAK
Request a Quote Datasheet

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Single Bipolar Transistors - MJD45H11-001OS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD45H11-001OS-ND
Single Bipolar Transistors MJD45H11-001OS-ND
Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Through Hole I-PAK

Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJD45H11-001 - 1077397-MJD45H11-001 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD45H11-001
1077397-MJD45H11-001
TRANSISTORS - Transistors (BJT) - Single - MJD45H11-001 1077397-MJD45H11-001
Manufacturer: ON Semiconductor Win Source Part Number: 1077397-MJD45H11-001 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 90MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 1V @ 400mA, 8A Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 40 @ 4A, 1V Maximum Power Dissipation: 1.75W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1077397-MJD45H11-001
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 90MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1V @ 400mA, 8A
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 40 @ 4A, 1V
Maximum Power Dissipation: 1.75W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD45H11-001 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD45H11-001
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD45H11-001
TRANS PNP 80V 8A IPAK

TRANS PNP 80V 8A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MJD45H11-001OS-ND 1077397-MJD45H11-001 MJD45H11-001
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJD45H11-001 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP
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