onsemi TRANSISTORS - Transistors (BJT) - Single - MJD44E3T4G MJD44E3T4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 003631-MJD44E3T4G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Darlington Family Name: MJD44E3 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2V @ 20mA, 10A Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 1000 @ 5A, 5V Maximum Power Dissipation: 1.75W Alternative Parts (Cross-Reference): MJD122; MJD122T4; 2N6388; BSP51; Introduction Date: March 05, 1997 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 003631-MJD44E3T4G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Darlington Family Name: MJD44E3 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2V @ 20mA, 10A Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 1000 @ 5A, 5V Maximum Power Dissipation: 1.75W Alternative Parts (Cross-Reference): MJD122; MJD122T4; 2N6388; BSP51; Introduction Date: March 05, 1997 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJD44E3T4G - 003631-MJD44E3T4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD44E3T4G
003631-MJD44E3T4G
TRANSISTORS - Transistors (BJT) - Single - MJD44E3T4G 003631-MJD44E3T4G
Manufacturer: ON Semiconductor Win Source Part Number: 003631-MJD44E3T4G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Darlington Family Name: MJD44E3 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2V @ 20mA, 10A Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 1000 @ 5A, 5V Maximum Power Dissipation: 1.75W Alternative Parts (Cross-Reference): MJD122; MJD122T4; 2N6388; BSP51; Introduction Date: March 05, 1997 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 003631-MJD44E3T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Darlington
Family Name: MJD44E3
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2V @ 20mA, 10A
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 1000 @ 5A, 5V
Maximum Power Dissipation: 1.75W
Alternative Parts (Cross-Reference): MJD122; MJD122T4; 2N6388; BSP51;
Introduction Date: March 05, 1997
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - MJD44E3T4GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD44E3T4GOSDKR-ND
Single Bipolar Transistors MJD44E3T4GOSDKR-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 10A 1.75W Surface Mount DPAK

Bipolar (BJT) Transistor NPN - Darlington 80V 10A 1.75W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD44E3T4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD44E3T4GOSTR-ND
Single Bipolar Transistors MJD44E3T4GOSTR-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 10A 1.75W Surface Mount DPAK

Bipolar (BJT) Transistor NPN - Darlington 80V 10A 1.75W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD44E3T4GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD44E3T4GOSCT-ND
Single Bipolar Transistors MJD44E3T4GOSCT-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 10A 1.75W Surface Mount DPAK

Bipolar (BJT) Transistor NPN - Darlington 80V 10A 1.75W Surface Mount DPAK

Buy Now Datasheet
Singapore
80V 10A DPAK Bipolar Transistor
276-MJD44E3T4G
80V 10A DPAK Bipolar Transistor 276-MJD44E3T4G
80V 10A NPN Darlington BJT Power Transistor, DPAK Product overview: MJD44E3T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 10A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 10A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD44E3T4G can be used for catalog matching and distributor lookup.

80V 10A NPN Darlington BJT Power Transistor, DPAK Product overview: MJD44E3T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 10A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 10A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD44E3T4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - MJD44E3T4G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD44E3T4G
Single Bipolar Transistors MJD44E3T4G
TRANS NPN DARL 80V 10A DPAK

TRANS NPN DARL 80V 10A DPAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
MJD44E3T4G
Darlington Transistors MJD44E3T4G
Darlington Transistors 10A 80V 20W NPN

Darlington Transistors 10A 80V 20W NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD44E3T4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD44E3T4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD44E3T4G
TRANS NPN DARL 80V 10A DPAK

TRANS NPN DARL 80V 10A DPAK

Supplier's Site
Bipolar Transistor, Npn, 80V; Transistor Polarity Onsemi - 42K1283 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 80V; Transistor Polarity Onsemi
42K1283
Bipolar Transistor, Npn, 80V; Transistor Polarity Onsemi 42K1283
BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:1.75W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:1.75W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site
Transistor, Npn, 80V, 10A, To-252; Transistor Polarity Onsemi - 14AC4577 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 80V, 10A, To-252; Transistor Polarity Onsemi
14AC4577
Transistor, Npn, 80V, 10A, To-252; Transistor Polarity Onsemi 14AC4577
TRANSISTOR, NPN, 80V, 10A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC Collector Current:10A; DC Current Gain hFE:1000hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, NPN, 80V, 10A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC Collector Current:10A; DC Current Gain hFE:1000hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor, Npn, 80V, 10A, To-252-3; Transistor Polarity Onsemi - 29X6089 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 80V, 10A, To-252-3; Transistor Polarity Onsemi
29X6089
Transistor, Npn, 80V, 10A, To-252-3; Transistor Polarity Onsemi 29X6089
TRANSISTOR, NPN, 80V, 10A, TO-252-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

TRANSISTOR, NPN, 80V, 10A, TO-252-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Darlington Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Darlington Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors
Product Number 003631-MJD44E3T4G MJD44E3T4GOSDKR-ND 276-MJD44E3T4G MJD44E3T4G MJD44E3T4G MJD44E3T4G 42K1283 14AC4577 29X6089
Product Name TRANSISTORS - Transistors (BJT) - Single - MJD44E3T4G Single Bipolar Transistors 80V 10A DPAK Bipolar Transistor Single Bipolar Transistors Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistor, Npn, 80V; Transistor Polarity Onsemi Transistor, Npn, 80V, 10A, To-252; Transistor Polarity Onsemi Transistor, Npn, 80V, 10A, To-252-3; Transistor Polarity Onsemi
Polarity NPN; NPN - Darlington NPN NPN NPN - Darlington; NPN NPN NPN NPN
VCEO 80 volts 80 volts 80 volts 80 volts 80 volts
IC(max) 10000 milliamps 10000 milliamps 10000 milliamps 10000 milliamps 10000 milliamps
PD 1750 milliwatts 1750 milliwatts 1750 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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