Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.75W Surface Mount DPAK
6A 100V NPN BJT Power Transistor, DPAK Product overview: MJD41CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6A, 100V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 6A, 100V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD41CT4G can be used for catalog matching and distributor lookup.
TRANS NPN 100V 6A DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 003629-MJD41CT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Family Name: MJD41C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.5V @ 600mA, 6A
Collector Cut-off Current(Max): 50μA
Typical Gain (hFE) (Min): 15 @ 3A, 4V
Maximum Power Dissipation: 1.75W
Alternative Parts (Cross-Reference): 2SCR586DTL; 2SCR586D3TL; MJD44H11T4; 2SCR586D3TL1;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Automotive
TRANS NPN 100V 6A DPAK
BIPOLAR TRANSISTOR, NPN, 100V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:1.75W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes
TRANS, BIPOL, NPN, 100V, TO252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:1.75W; DC Collector Current:6A; DC Current Gain hFE:15hFE; Transistor Case RoHS Compliant: Yes
Bipolar Transistors - BJT 6A 100V 20W NPN
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | MJD41CT4GOSCT-ND | 276-MJD41CT4G | MJD41CT4G | 003629-MJD41CT4G | MJD41CT4G | 71J5854 | 78Y6730 | MJD41CT4G |
| Product Name | Single Bipolar Transistors | 6A 100V DPAK Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJD41CT4G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 100V, Dpak; Transistor Polarity Onsemi | Trans, Bipol, Npn, 100V, To252; Transistor Polarity Onsemi | Bipolar Transistors - BJT |
| Polarity | NPN | NPN | NPN; NPN | NPN; NPN | NPN | NPN | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; DPAK-3 | TO-3; TO-252 (DPAK) | TO-3 | |||
| IC(max) | 6000 milliamps | 6000 milliamps | 6000 milliamps | 6000 milliamps | 6000 milliamps | |||
| VCEO | 100 volts | 100 volts | 100 volts | 100 volts | 100 volts | |||
| VCBO | 100 volts |
