PNP BJT Transistor, 40V, 3A, DPAK, 3MHz Product overview: MJD32T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3A, 3MHz, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 3A, 3MHz, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD32T4G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 40V 3A 3MHz 1.56W Surface Mount DPAK
Bipolar (BJT) Transistor PNP 40V 3A 3MHz 1.56W Surface Mount DPAK
Bipolar (BJT) Transistor PNP 40V 3A 3MHz 1.56W Surface Mount DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 003619-MJD32T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 3MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 1.2V @ 375mA, 3A
Collector Cut-off Current(Max): 50μA
Typical Gain (hFE) (Min): 10 @ 3A, 4V
Maximum Power Dissipation: 1.56W
TRANS PNP 40V 3A DPAK
BIPOLAR TRANSISTOR, PNP, -40V D-PAK, FULL REEL; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:-3A; Power Dissipation Pd:15W; DC Current Gain hFE:10hFE; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Bipolar Transistors - BJT 3A 40V 15W PNP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-MJD32T4G | MJD32T4GOSDKR-ND | 003619-MJD32T4G | MJD32T4G | 71J5850 | MJD32T4G |
| Product Name | 40V 3A 3MHz DPAK Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJD32T4G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Pnp, -40V D-Pak, Full Reel; Transistor Polarity Onsemi | Bipolar Transistors - BJT |
| Polarity | PNP | PNP | PNP; PNP | PNP | ||
| IC(max) | 3000 milliamps | 3000 milliamps | -3000 milliamps | |||
| VCEO | 40 volts | 40 volts | ||||
| VCBO | 40 volts | |||||
| fT | 3 MHz |
