onsemi Single Bipolar Transistors MJD32CT4GN

The MJD32CT4GN is a PNP silicon power transistor in a DPAK (369C) surface-mount package, rated for a maximum collector-emitter voltage of 100 V and continuous collector current of 3 A. It has a total power dissipation of 15 W at 25 °C case temperature, with a thermal resistance from junction-to-case of 8.3 °C/W. The device meets UL 94 V-0 flammability standard, is Pb-free and RoHS compliant, and is AEC-Q101 qualified and PPAP capable. It is designed for general-purpose amplifier and low-speed switching applications.