onsemi 100V 3A 3MHz DPAK Bipolar Transistor MJD31CT4G

Description
100V 3A NPN BJT Power Transistor, DPAK, 3MHz Product overview: MJD31CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3A, 3MHz, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 3A, 3MHz, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31CT4G can be used for catalog matching and distributor lookup.
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Description
100V 3A NPN BJT Power Transistor, DPAK, 3MHz Product overview: MJD31CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3A, 3MHz, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 3A, 3MHz, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31CT4G can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
100V 3A 3MHz DPAK Bipolar Transistor
276-MJD31CT4G
100V 3A 3MHz DPAK Bipolar Transistor 276-MJD31CT4G
100V 3A NPN BJT Power Transistor, DPAK, 3MHz Product overview: MJD31CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3A, 3MHz, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 3A, 3MHz, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31CT4G can be used for catalog matching and distributor lookup.

100V 3A NPN BJT Power Transistor, DPAK, 3MHz Product overview: MJD31CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3A, 3MHz, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 3A, 3MHz, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31CT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - MJD31CT4G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD31CT4G
Single Bipolar Transistors MJD31CT4G
TRANS NPN 100V 3A DPAK

TRANS NPN 100V 3A DPAK

Supplier's Site Datasheet
Single Bipolar Transistors - MJD31CT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD31CT4GOSTR-ND
Single Bipolar Transistors MJD31CT4GOSTR-ND
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD31CT4GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD31CT4GOSCT-ND
Single Bipolar Transistors MJD31CT4GOSCT-ND
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD31CT4GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD31CT4GOSDKR-ND
Single Bipolar Transistors MJD31CT4GOSDKR-ND
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJD31CT4G - 003607-MJD31CT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD31CT4G
003607-MJD31CT4G
TRANSISTORS - Transistors (BJT) - Single - MJD31CT4G 003607-MJD31CT4G
Manufacturer: ON Semiconductor Win Source Part Number: 003607-MJD31CT4G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 10 @ 3A, 4V Maximum Power Dissipation: 1.56W Alternative Parts (Cross-Reference): MJD31CETF; MJD31CG; MJD31CRLG; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management, Automotive

Manufacturer: ON Semiconductor
Win Source Part Number: 003607-MJD31CT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.2V @ 375mA, 3A
Collector Cut-off Current(Max): 50μA
Typical Gain (hFE) (Min): 10 @ 3A, 4V
Maximum Power Dissipation: 1.56W
Alternative Parts (Cross-Reference): MJD31CETF; MJD31CG; MJD31CRLG;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management, Automotive

Buy Now Datasheet
Darlington Pairs - 464136 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
464136
Darlington Pairs 464136
Power 3A 100V Discrete NPN, MJD31CT4G

Power 3A 100V Discrete NPN, MJD31CT4G

Supplier's Site
Darlington Pairs - 464136P - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
464136P
Darlington Pairs 464136P
Power 3A 100V Discrete NPN, MJD31CT4G

Power 3A 100V Discrete NPN, MJD31CT4G

Supplier's Site
Darlington Pairs - 1632498 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
1632498
Darlington Pairs 1632498
Power 3A 100V Discrete NPN, MJD31CT4G

Power 3A 100V Discrete NPN, MJD31CT4G

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJD31CT4G
Bipolar Transistors - BJT MJD31CT4G
Bipolar Transistors - BJT 3A 100V 15W NPN

Bipolar Transistors - BJT 3A 100V 15W NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD31CT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD31CT4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD31CT4G
TRANS NPN 100V 3A DPAK

TRANS NPN 100V 3A DPAK

Supplier's Site
Bipolar Transistor, Npn, 40V, Full Reel; Transistor Polarity Onsemi - 88H4767 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 40V, Full Reel; Transistor Polarity Onsemi
88H4767
Bipolar Transistor, Npn, 40V, Full Reel; Transistor Polarity Onsemi 88H4767
BIPOLAR TRANSISTOR, NPN, 40V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15mW; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 40V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15mW; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar Transistor, Npn, 100V, 3A, To-252; Transistor Polarity Onsemi - 54T9964 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 100V, 3A, To-252; Transistor Polarity Onsemi
54T9964
Bipolar Transistor, Npn, 100V, 3A, To-252; Transistor Polarity Onsemi 54T9964
BIPOLAR TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 100 V, 3 Mhz, 15 W, 3 A, 10 Rohs Compliant Onsemi - 90W4489 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 100 V, 3 Mhz, 15 W, 3 A, 10 Rohs Compliant Onsemi
90W4489
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 100 V, 3 Mhz, 15 W, 3 A, 10 Rohs Compliant Onsemi 90W4489
Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Darlington Transistors Darlington Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 276-MJD31CT4G MJD31CT4G MJD31CT4GOSTR-ND 003607-MJD31CT4G 464136 464136P MJD31CT4G MJD31CT4G 88H4767 54T9964 90W4489
Product Name 100V 3A 3MHz DPAK Bipolar Transistor Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJD31CT4G Darlington Pairs Darlington Pairs Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistor, Npn, 40V, Full Reel; Transistor Polarity Onsemi Bipolar Transistor, Npn, 100V, 3A, To-252; Transistor Polarity Onsemi Bipolar (Bjt) Single Transistor, General Purpose, Npn, 100 V, 3 Mhz, 15 W, 3 A, 10 Rohs Compliant Onsemi
Polarity NPN NPN; NPN NPN NPN; NPN NPN NPN NPN NPN NPN
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps 3000 milliamps 3000 milliamps
VCEO 100 volts 100 volts 100 volts 100 volts 100 volts
VCBO 100 volts
fT 3 MHz
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