The MJD31CT4 is an NPN silicon power transistor in a DPAK (TO-252) surface-mount package, rated for a collector-emitter voltage of 100 V and continuous collector current of 3 A. It has a maximum power dissipation of 15 W at 25°C case temperature, with thermal resistance from junction to case of 8.3°C/W. The device meets UL 94 V-0 flammability requirements, is Pb-free and RoHS compliant, and is AEC-Q101 qualified for automotive applications. It is electrically similar to the TIP31 series and features a base-emitter on voltage of up to 1.8 V at 3 A collector current and DC current gain ranging from 10 to 50 at 3 A. Its switching characteristics include a current gain-bandwidth product of 3 MHz and collector-emitter saturation voltage of up to 1.2 V under specified conditions.
3A 100V NPN BJT Power Transistor, TO-252-3 Product overview: MJD31CT4 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 100V, TO-252. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 100V, TO-252, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31CT4 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MJD31CT4 |
| Product Name | 3A 100V TO-252 Bipolar Transistor |
| Polarity | NPN |
| IC(max) | 3000 milliamps |
| VCEO | 100 volts |
| VCBO | 100 volts |
