onsemi Single Bipolar Transistors MJD31CITU

Description
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK
  • Single Bipolar Transistors - MJD31CITU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - MJD31CITU - 058925-MJD31CITU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD31CITU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJD31CITU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD31CITU-ND
Single Bipolar Transistors MJD31CITU-ND
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJD31CITU - 058925-MJD31CITU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD31CITU
058925-MJD31CITU
TRANSISTORS - Transistors (BJT) - Single - MJD31CITU 058925-MJD31CITU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 058925-MJD31CITU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: IPAK (TO-251) Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 10 @ 3A, 4V Maximum Power Dissipation: 1.56W Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 70

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 058925-MJD31CITU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: IPAK (TO-251)
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.2V @ 375mA, 3A
Collector Cut-off Current(Max): 50μA
Typical Gain (hFE) (Min): 10 @ 3A, 4V
Maximum Power Dissipation: 1.56W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD31CITU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD31CITU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD31CITU
TRANS NPN 100V 3A IPAK

TRANS NPN 100V 3A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number MJD31CITU-ND 058925-MJD31CITU MJD31CITU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJD31CITU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
Unlock Full Specs
to access all available technical data