onsemi TRANSISTORS - Transistors (BJT) - Single - MJD31CG MJD31CG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 003609-MJD31CG Packaging: Tube/Rail Mounting: SMD (SMT) Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 10 @ 3A, 4V Maximum Power Dissipation: 1.56W Alternative Parts (Cross-Reference): MJD31CETF; MJD31CT4G; MJD31CRLG; Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 003609-MJD31CG Packaging: Tube/Rail Mounting: SMD (SMT) Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 10 @ 3A, 4V Maximum Power Dissipation: 1.56W Alternative Parts (Cross-Reference): MJD31CETF; MJD31CT4G; MJD31CRLG; Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJD31CG - 003609-MJD31CG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD31CG
003609-MJD31CG
TRANSISTORS - Transistors (BJT) - Single - MJD31CG 003609-MJD31CG
Manufacturer: ON Semiconductor Win Source Part Number: 003609-MJD31CG Packaging: Tube/Rail Mounting: SMD (SMT) Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 10 @ 3A, 4V Maximum Power Dissipation: 1.56W Alternative Parts (Cross-Reference): MJD31CETF; MJD31CT4G; MJD31CRLG; Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 003609-MJD31CG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.2V @ 375mA, 3A
Collector Cut-off Current(Max): 50μA
Typical Gain (hFE) (Min): 10 @ 3A, 4V
Maximum Power Dissipation: 1.56W
Alternative Parts (Cross-Reference): MJD31CETF; MJD31CT4G; MJD31CRLG;
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - MJD31CG - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD31CG
Single Bipolar Transistors MJD31CG
TRANS NPN 100V 3A DPAK

TRANS NPN 100V 3A DPAK

Supplier's Site Datasheet
Single Bipolar Transistors - MJD31CGOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD31CGOS-ND
Single Bipolar Transistors MJD31CGOS-ND
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK

Buy Now Datasheet
Singapore
100V 3A DPAK Bipolar Transistor
276-MJD31CG
100V 3A DPAK Bipolar Transistor 276-MJD31CG
NPN BJT 100V 3A DPAK Power Transistor Product overview: MJD31CG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31CG can be used for catalog matching and distributor lookup.

NPN BJT 100V 3A DPAK Power Transistor Product overview: MJD31CG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31CG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Darlington Pairs - 1452795 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
1452795
Darlington Pairs 1452795
SMT NPN transistor,MJD31C 3A Ic 4Vce

SMT NPN transistor,MJD31C 3A Ic 4Vce

Supplier's Site
Rf Transistor, Npn, 100V, 3Mhz Dpak; Transistor Polarity Onsemi - 98H0735 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor, Npn, 100V, 3Mhz Dpak; Transistor Polarity Onsemi
98H0735
Rf Transistor, Npn, 100V, 3Mhz Dpak; Transistor Polarity Onsemi 98H0735
RF TRANSISTOR, NPN, 100V, 3MHZ DPAK; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:1.56W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

RF TRANSISTOR, NPN, 100V, 3MHZ DPAK; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:1.56W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 100 V, 3 Mhz, 1.56 W, 3 A, 10 Rohs Compliant Onsemi - 38K5597 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 100 V, 3 Mhz, 1.56 W, 3 A, 10 Rohs Compliant Onsemi
38K5597
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 100 V, 3 Mhz, 1.56 W, 3 A, 10 Rohs Compliant Onsemi 38K5597
Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 3 MHz, 1.56 W, 3 A, 10 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 3 MHz, 1.56 W, 3 A, 10 RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJD31CG
Bipolar Transistors - BJT MJD31CG
Bipolar Transistors - BJT 3A 100V 15W NPN

Bipolar Transistors - BJT 3A 100V 15W NPN

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
MJD31CG
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT MJD31CG
100V 1.56W 10@3A,4V 3A NPN TO-252-2(DPAK) Bipolar Transistors - BJT ROHS

100V 1.56W 10@3A,4V 3A NPN TO-252-2(DPAK) Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD31CG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD31CG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD31CG
TRANS NPN 100V 3A DPAK

TRANS NPN 100V 3A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. RS Components, Ltd. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Darlington Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 003609-MJD31CG MJD31CG MJD31CGOS-ND 276-MJD31CG 1452795 98H0735 38K5597 MJD31CG MJD31CG MJD31CG
Product Name TRANSISTORS - Transistors (BJT) - Single - MJD31CG Single Bipolar Transistors Single Bipolar Transistors 100V 3A DPAK Bipolar Transistor Darlington Pairs Rf Transistor, Npn, 100V, 3Mhz Dpak; Transistor Polarity Onsemi Bipolar (Bjt) Single Transistor, General Purpose, Npn, 100 V, 3 Mhz, 1.56 W, 3 A, 10 Rohs Compliant Onsemi Bipolar Transistors - BJT Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN NPN NPN NPN NPN NPN NPN
Package Type SOT3; DPAK-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); Dpak (to-252) TO-3; TO-252 (DPAK) TO-3 TO-252 (DPAK)
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps 3000 milliamps
VCEO 100 volts 100 volts 100 volts 100 volts
Operating Frequency 3 MHz
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