onsemi TRANSISTORS - Transistors (BJT) - Single - MJD31C1G MJD31C1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 058924-MJD31C1G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 10 @ 3A, 4V Maximum Power Dissipation: 1.56W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors (BJT) - Single - MJD31C1G - 058924-MJD31C1G - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - MJD31C1GOS-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD31C1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK - 598-MJD31C1G - Utmel Electronic Limited
    Utmel Electronic Limited
  • Bipolar Transistor, Npn, 100V Ipak-4; Transistor Polarity Onsemi - 42K1277 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 058924-MJD31C1G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 10 @ 3A, 4V Maximum Power Dissipation: 1.56W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJD31C1G - 058924-MJD31C1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD31C1G
058924-MJD31C1G
TRANSISTORS - Transistors (BJT) - Single - MJD31C1G 058924-MJD31C1G
Manufacturer: ON Semiconductor Win Source Part Number: 058924-MJD31C1G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.2V @ 375mA, 3A Collector Cut-off Current(Max): 50μA Typical Gain (hFE) (Min): 10 @ 3A, 4V Maximum Power Dissipation: 1.56W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 058924-MJD31C1G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I-Pak
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.2V @ 375mA, 3A
Collector Cut-off Current(Max): 50μA
Typical Gain (hFE) (Min): 10 @ 3A, 4V
Maximum Power Dissipation: 1.56W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
SMD 100V 3A DPAK Bipolar Transistor
276-MJD31C1G
SMD 100V 3A DPAK Bipolar Transistor 276-MJD31C1G
100V 3A NPN BJT Power Transistor, DPAK, SMD Product overview: MJD31C1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 100V, 3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31C1G can be used for catalog matching and distributor lookup.

100V 3A NPN BJT Power Transistor, DPAK, SMD Product overview: MJD31C1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 100V, 3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31C1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - MJD31C1GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD31C1GOS-ND
Single Bipolar Transistors MJD31C1GOS-ND
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJD31C1G
Bipolar Transistors - BJT MJD31C1G
Bipolar Transistors - BJT 3A 100V 15W NPN

Bipolar Transistors - BJT 3A 100V 15W NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD31C1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD31C1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD31C1G
TRANS NPN 100V 3A IPAK

TRANS NPN 100V 3A IPAK

Supplier's Site
ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK - 598-MJD31C1G - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK
598-MJD31C1G
ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK 598-MJD31C1G
ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK

ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK

Supplier's Site
Bipolar Transistor, Npn, 100V Ipak-4; Transistor Polarity Onsemi - 42K1277 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 100V Ipak-4; Transistor Polarity Onsemi
42K1277
Bipolar Transistor, Npn, 100V Ipak-4; Transistor Polarity Onsemi 42K1277
BIPOLAR TRANSISTOR, NPN, 100V IPAK-4; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHzRoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 100V IPAK-4; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHzRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 058924-MJD31C1G 276-MJD31C1G MJD31C1GOS-ND MJD31C1G MJD31C1G 598-MJD31C1G 42K1277
Product Name TRANSISTORS - Transistors (BJT) - Single - MJD31C1G SMD 100V 3A DPAK Bipolar Transistor Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK Bipolar Transistor, Npn, 100V Ipak-4; Transistor Polarity Onsemi
Polarity NPN; NPN NPN NPN NPN; NPN NPN
Package Type SOT3; I-Pak TO-251-3 Short Leads, IPAK, TO-251AA TO-3
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps 3000 milliamps
VCEO 10 volts 100 volts 10 volts 100 volts
VCBO 100 volts
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