Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK
Manufacturer: ON Semiconductor
Win Source Part Number: 058924-MJD31C1G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I-Pak
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.2V @ 375mA, 3A
Collector Cut-off Current(Max): 50μA
Typical Gain (hFE) (Min): 10 @ 3A, 4V
Maximum Power Dissipation: 1.56W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
100V 3A NPN BJT Power Transistor, DPAK, SMD Product overview: MJD31C1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 100V, 3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31C1G can be used for catalog matching and distributor lookup.
ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK
Bipolar Transistors - BJT 3A 100V 15W NPN
TRANS NPN 100V 3A IPAK
BIPOLAR TRANSISTOR, NPN, 100V IPAK-4; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHzRoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | MJD31C1GOS-ND | 058924-MJD31C1G | 276-MJD31C1G | 598-MJD31C1G | MJD31C1G | MJD31C1G | 42K1277 |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJD31C1G | SMD 100V 3A DPAK Bipolar Transistor | ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 100V Ipak-4; Transistor Polarity Onsemi |
| Polarity | NPN | NPN; NPN | NPN | NPN; NPN | NPN | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; I-Pak | TO-3 | ||||
| IC(max) | 3000 milliamps | 3000 milliamps | 3000 milliamps | 3000 milliamps | |||
| VCEO | 10 volts | 10 volts | 100 volts | 100 volts | |||
| VCBO | 100 volts |
