onsemi TRANSISTORS - Transistors (BJT) - Single - MJD3055G MJD3055G

Manufacturer: ON Semiconductor
Win Source Part Number: 1223651-MJD3055G
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Power - Max: 1.75W
Transistor Type: NPN
Frequency - Transition: 2MHz
Part Status: Obsolete(EOL)
Family Name: MJD3055
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: DPAK-3
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Maximum): 50μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 20 @ 4A, 4V
Alternative Parts (Cross-Reference): MMJD3055-TP; MJD3055; MJD3055T4;
Introduction Date: February 20, 1997
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

60V 10A NPN BJT Power Transistor, DPAK Product overview: MJD3055G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 10A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD3055G can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 60V 10A 2MHz 1.75W Surface Mount DPAK