Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK
Win Source Part Number: 1078894-MJD253-1G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 75
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): 2SB1216S-E; 2SB1216T-E; MJD42C1GMJD2531G;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: MJD253-1GOS,MJD2531G
Base Product Number: MJD253
4.0 A, 100 V PNP Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE Product overview: MJD253-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 4.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD253-1G can be used for catalog matching and distributor lookup.
TRANS PNP 100V 4A IPAK
POWER TRANSISTOR, PNP, -100V, I-PAK; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
Bipolar Transistors - BJT 4A 100V 12.5W PNP
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | MJD253-1GOS-ND | 1078894-MJD253-1G | 276-MJD253-1G | MJD253-1G | 26K4441 | MJD253-1G |
| Product Name | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | 4.0 A 100 V DPAK Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Power Transistor, Pnp, -100V, I-Pak; Transistor Polarity Onsemi | Bipolar Transistors - BJT |
| Polarity | PNP | PNP | PNP | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3 | I-PAK | TO-3 | ||
| IC(max) | 4000 milliamps | 4000 milliamps | ||||
| Power Gain | 40 dB | |||||
| Operating Frequency | 40 MHz |
