onsemi 4.0 A 100 V DPAK Bipolar Transistor MJD253-1G

Description
4.0 A, 100 V PNP Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE Product overview: MJD253-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 4.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD253-1G can be used for catalog matching and distributor lookup.
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Description
4.0 A, 100 V PNP Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE Product overview: MJD253-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 4.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD253-1G can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
4.0 A 100 V DPAK Bipolar Transistor
276-MJD253-1G
4.0 A 100 V DPAK Bipolar Transistor 276-MJD253-1G
4.0 A, 100 V PNP Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE Product overview: MJD253-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 4.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD253-1G can be used for catalog matching and distributor lookup.

4.0 A, 100 V PNP Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE Product overview: MJD253-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 4.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD253-1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - MJD253-1GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD253-1GOS-ND
Single Bipolar Transistors MJD253-1GOS-ND
Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK

Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1078894-MJD253-1G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1078894-MJD253-1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1078894-MJD253-1G
Win Source Part Number: 1078894-MJD253-1G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tube Standard Package: 75 Power - Max: 1.4 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 4 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Frequency - Transition: 40MHz Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Temperature Range - Operating: -65°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): 2SB1216S-E; 2SB1216T-E; MJD42C1GMJD2531G; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: onsemi Other Names: MJD253-1GOS,MJD2531G ,ONSONSMJD253-1G,MJD 253-1G-ND,2156-MJD25 3-1G-OS Base Product Number: MJD253

Win Source Part Number: 1078894-MJD253-1G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tube
Standard Package: 75
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Temperature Range - Operating: -65°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): 2SB1216S-E; 2SB1216T-E; MJD42C1GMJD2531G;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: MJD253-1GOS,MJD2531G,ONSONSMJD253-1G,MJD253-1G-ND,2156-MJD253-1G-OS
Base Product Number: MJD253

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD253-1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD253-1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD253-1G
TRANS PNP 100V 4A IPAK

TRANS PNP 100V 4A IPAK

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJD253-1G
Bipolar Transistors - BJT MJD253-1G
Bipolar Transistors - BJT 4A 100V 12.5W PNP

Bipolar Transistors - BJT 4A 100V 12.5W PNP

Buy Now Datasheet
Power Transistor, Pnp, -100V, I-Pak; Transistor Polarity Onsemi - 26K4441 - Newark, An Avnet Company
Chicago, IL, United States
Power Transistor, Pnp, -100V, I-Pak; Transistor Polarity Onsemi
26K4441
Power Transistor, Pnp, -100V, I-Pak; Transistor Polarity Onsemi 26K4441
POWER TRANSISTOR, PNP, -100V, I-PAK; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

POWER TRANSISTOR, PNP, -100V, I-PAK; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 276-MJD253-1G MJD253-1GOS-ND 1078894-MJD253-1G MJD253-1G MJD253-1G 26K4441
Product Name 4.0 A 100 V DPAK Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT Power Transistor, Pnp, -100V, I-Pak; Transistor Polarity Onsemi
Polarity PNP PNP PNP
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3 I-PAK TO-3
IC(max) 4000 milliamps 4000 milliamps
Power Gain 40 dB
Operating Frequency 40 MHz
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