onsemi TRANSISTORS - Transistors (BJT) - Single - MJD243T4G MJD243T4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 003603-MJD243T4G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 40MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 600mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 40 @ 200mA, 1V Maximum Power Dissipation: 1.4W
Request a Quote
Description
Manufacturer: ON Semiconductor Win Source Part Number: 003603-MJD243T4G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 40MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 600mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 40 @ 200mA, 1V Maximum Power Dissipation: 1.4W
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The MJD243 is a complementary NPN power transistor designed for low voltage, low-power, high-gain audio amplifier applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 4A, with a peak collector current of 8A. The transistor has a high DC current gain, with values ranging from 15 to 180 depending on the collector current conditions. It also offers low collector-emitter saturation voltage, making it suitable for efficient switching applications. The device is housed in a DPAK-3 package, which is lead-formed for surface mount applications. It is RoHS compliant and Pb-free, meeting environmental standards. The operating temperature range is from -65¬8C to +150¬8C, ensuring reliability in various conditions. The transistor is AEC-Q101 qualified, making it suitable for automotive applications. With a power dissipation capability of 12.5W at a case temperature of 25¬8C, it provides robust performance for demanding applications.

Datasheet Summary
Powered by GS/AI

The MJD243 is a complementary NPN power transistor designed for low voltage, low-power, high-gain audio amplifier applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 4A, with a peak collector current of 8A. The transistor has a high DC current gain, with values ranging from 15 to 180 depending on the collector current conditions. It also offers low collector-emitter saturation voltage, making it suitable for efficient switching applications. The device is housed in a DPAK-3 package, which is lead-formed for surface mount applications. It is RoHS compliant and Pb-free, meeting environmental standards. The operating temperature range is from -65¬8C to +150¬8C, ensuring reliability in various conditions. The transistor is AEC-Q101 qualified, making it suitable for automotive applications. With a power dissipation capability of 12.5W at a case temperature of 25¬8C, it provides robust performance for demanding applications.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJD243T4G - 003603-MJD243T4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD243T4G
003603-MJD243T4G
TRANSISTORS - Transistors (BJT) - Single - MJD243T4G 003603-MJD243T4G
Manufacturer: ON Semiconductor Win Source Part Number: 003603-MJD243T4G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 40MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 600mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 40 @ 200mA, 1V Maximum Power Dissipation: 1.4W

Manufacturer: ON Semiconductor
Win Source Part Number: 003603-MJD243T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 40MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 600mV @ 100mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 200mA, 1V
Maximum Power Dissipation: 1.4W

Buy Now Datasheet
Bipolar Transistors - 7925678 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
7925678
Bipolar Transistors 7925678
Transistor NPN 100V 4A DPAK

Transistor NPN 100V 4A DPAK

Supplier's Site
Bipolar Transistors - 7925678P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
7925678P
Bipolar Transistors 7925678P
Transistor NPN 100V 4A DPAK

Transistor NPN 100V 4A DPAK

Supplier's Site
Bipolar Transistors - 1250071 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1250071
Bipolar Transistors 1250071
Transistor NPN 100V 4A DPAK

Transistor NPN 100V 4A DPAK

Supplier's Site
Single Bipolar Transistors - MJD243T4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD243T4GOSTR-ND
Single Bipolar Transistors MJD243T4GOSTR-ND
Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD243T4GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD243T4GOSCT-ND
Single Bipolar Transistors MJD243T4GOSCT-ND
Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD243T4GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD243T4GOSDKR-ND
Single Bipolar Transistors MJD243T4GOSDKR-ND
Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Surface Mount DPAK

Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.4W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD243T4G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD243T4G
Single Bipolar Transistors MJD243T4G
TRANS NPN 100V 4A DPAK

TRANS NPN 100V 4A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD243T4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD243T4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD243T4G
TRANS NPN 100V 4A DPAK

TRANS NPN 100V 4A DPAK

Supplier's Site
Power Transistor, Npn, 100V, D-Pak, Full Reel; Transistor Polarity Onsemi - 88H4766 - Newark, An Avnet Company
Chicago, IL, United States
Power Transistor, Npn, 100V, D-Pak, Full Reel; Transistor Polarity Onsemi
88H4766
Power Transistor, Npn, 100V, D-Pak, Full Reel; Transistor Polarity Onsemi 88H4766
POWER TRANSISTOR, NPN, 100V, D-PAK, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

POWER TRANSISTOR, NPN, 100V, D-PAK, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
Power Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi - 09R9436 - Newark, An Avnet Company
Chicago, IL, United States
Power Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi
09R9436
Power Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi 09R9436
POWER TRANSISTOR, NPN, 100V, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

POWER TRANSISTOR, NPN, 100V, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Transistor, Bipol, Npn, 100V, To-252-3; Transistor Polarity Onsemi - 81Y6793 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipol, Npn, 100V, To-252-3; Transistor Polarity Onsemi
81Y6793
Transistor, Bipol, Npn, 100V, To-252-3; Transistor Polarity Onsemi 81Y6793
TRANSISTOR, BIPOL, NPN, 100V, TO-252-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:4A; DC Current Gain hFE:15hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, BIPOL, NPN, 100V, TO-252-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:4A; DC Current Gain hFE:15hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJD243T4G
Bipolar Transistors - BJT MJD243T4G
Bipolar Transistors - BJT 4A 100V 12.5W NPN

Bipolar Transistors - BJT 4A 100V 12.5W NPN

Buy Now Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Transistors Bipolar RF Transistors
Product Number 003603-MJD243T4G 7925678 7925678P MJD243T4GOSTR-ND MJD243T4G MJD243T4G 88H4766 09R9436 81Y6793 MJD243T4G
Product Name TRANSISTORS - Transistors (BJT) - Single - MJD243T4G Bipolar Transistors Bipolar Transistors Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Power Transistor, Npn, 100V, D-Pak, Full Reel; Transistor Polarity Onsemi Power Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi Transistor, Bipol, Npn, 100V, To-252-3; Transistor Polarity Onsemi Bipolar Transistors - BJT
Polarity NPN; NPN NPN NPN NPN NPN; NPN NPN NPN NPN
Package Type SOT3; DPAK-3 TO-252 (DPAK); Dpak (to-252) TO-252 (DPAK); TO-252 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK TO-3 TO-3 TO-3
Number of units in IC 1
IC(max) 4000 milliamps 4000 milliamps
VCEO 100 volts 100 volts
Unlock Full Specs
to access all available technical data