The MJD210T4 is a PNP silicon bipolar transistor in a DPAK package, designed for low voltage, low-power, high-gain audio amplifier applications. It has a continuous collector current rating of 5.0 A and a collector-emitter voltage rating of 25 Vdc. The device dissipates 1.4 W at 25°C ambient temperature with a derating of 0.011 W/°C. It features a minimum DC current gain of 10 at 5 A collector current and 2 V collector-emitter voltage, with a collector-emitter saturation voltage of up to 1.8 V under the same conditions. The transistor meets UL 94 V-0 flammability standards and is RoHS compliant with a Pb-free finish. It is AEC-Q101 qualified and PPAP capable for automotive applications. Thermal resistance from junction to case is 10°C/W, and junction-to-ambient is 89.3°C/W when surface mounted on recommended pad sizes. The operating and storage junction temperature range is -65°C to +150°C.
PNP BJT Transistor, 5A, 25V, 1.4W, TO-252 Product overview: MJD210T4 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5A, 25V, 1.4W, TO-252. Search-friendly keywords include transistor, BJT, switching, amplification, 5A, 25V, 1.4W, TO-252, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD210T4 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MJD210T4 |
| Product Name | 5A 25V 1.4W TO-252 Bipolar Transistor |
| Polarity | PNP |
| IC(max) | 5000 milliamps |
| VCEO | 25 volts |
| VCBO | 40 volts |
