Bipolar (BJT) Transistor NPN 25V 5A 65MHz 1.4W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 25V 5A 65MHz 1.4W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 25V 5A 65MHz 1.4W Surface Mount DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 003598-MJD200T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 65MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
Max Vce (sat): 1.8V @ 1A, 5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 45 @ 2A, 1V
Maximum Power Dissipation: 1.4W
5A 25V NPN BJT Power Transistor, DPAK Product overview: MJD200T4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5A, 25V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 5A, 25V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD200T4G can be used for catalog matching and distributor lookup.
TRANS NPN 25V 5A DPAK
BIPOLAR TRANSISTOR, NPN, 25V, D-PAK, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:25V; Continuous Collector Current:5A; Power Dissipation:12.5W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
TRANS, BIPOL, NPN, 25V, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:65MHz; Power Dissipation Pd:12.5W; DC Collector Current:5A; DC Current Gain hFE:70hFE; Transistor Case RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | MJD200T4GOSTR-ND | 003598-MJD200T4G | 276-MJD200T4G | MJD200T4G | 45J1486 | 27AC8950 |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJD200T4G | 5A 25V DPAK Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 25V, D-Pak, Full Reel; Transistor Polarity Onsemi | Trans, Bipol, Npn, 25V, To-252; Transistor Polarity Onsemi |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN | |
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; DPAK-3 | TO-3 | TO-3; TO-252 (DPAK) | ||
| IC(max) | 5000 milliamps | 5000 milliamps | 5000 milliamps | |||
| VCEO | 25 volts | 25 volts | 25 volts | |||
| VCBO | 40 volts |
