MJD122T4 is an NPN Darlington power transistor in a DPAK surface mount package, rated for a continuous collector current of 8 A and a collector-emitter voltage of 100 V. It has a total power dissipation of 20 W at a case temperature of 25°C, with a thermal resistance junction-to-case of 6.25°C/W. The device features a minimum DC current gain of 1000 at 4 A collector current, base-emitter saturation voltage up to 4.5 V, and collector-emitter saturation voltage up to 2 V at 4 A. It meets UL 94 V-0 flammability rating, is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified for automotive applications. The package style is DPAK (Case 369C, Style 1) with dimensions specified for surface mounting.
8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: MJD122T4 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 8.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD122T4 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MJD122T4 |
| Product Name | 8.0 A 100 V DPAK Bipolar Transistor |
| Polarity | NPN |
| IC(max) | 8000 milliamps |
| VCEO | 100 volts |
