onsemi Single Bipolar Transistors MJD122-1G

Description
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJD122-1G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD122-1G-ND
Single Bipolar Transistors MJD122-1G-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK

Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJD122-1G - 884887-MJD122-1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD122-1G
884887-MJD122-1G
TRANSISTORS - Transistors (BJT) - Single - MJD122-1G 884887-MJD122-1G
Manufacturer: ON Semiconductor Win Source Part Number: 884887-MJD122-1G Operating Temperature Range: -65°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 4MHz 1.75 W Surface Mount DPAK Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Package: Tube Mounting: Surface Mount Family Name: MJD122 Categories: Discrete Semiconductor Products Case / Package: DPAK ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 75 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 35 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: ON Semiconductor
Win Source Part Number: 884887-MJD122-1G
Operating Temperature Range: -65°C ~ 150°C (TJ)
Features: Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 4MHz 1.75 W Surface Mount DPAK
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Tube
Mounting: Surface Mount
Family Name: MJD122
Categories: Discrete Semiconductor Products
Case / Package: DPAK
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 75
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

Buy Now
Singapore
100V 8A DPAK Bipolar Transistor
276-MJD122-1G
100V 8A DPAK Bipolar Transistor 276-MJD122-1G
TRANS NPN DARL 100V 8A DPAK Product overview: MJD122-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 8A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD122-1G can be used for catalog matching and distributor lookup.

TRANS NPN DARL 100V 8A DPAK Product overview: MJD122-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 8A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD122-1G can be used for catalog matching and distributor lookup.

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
MJD122-1G
Darlington Transistors MJD122-1G
Darlington Transistors BIP IPAK NPN 8A 100V

Darlington Transistors BIP IPAK NPN 8A 100V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD122-1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD122-1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD122-1G
TRANS NPN DARL 100V 8A DPAK

TRANS NPN DARL 100V 8A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Darlington Transistors Bipolar RF Transistors
Product Number MJD122-1G-ND 884887-MJD122-1G 276-MJD122-1G MJD122-1G MJD122-1G
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJD122-1G 100V 8A DPAK Bipolar Transistor Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; DPAK Tube
Packing Method Tube Tube; Tube
Unlock Full Specs
to access all available technical data