PNP Darlington Power Transistor, 100V, 2A, TO-251 Product overview: MJD117-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD117-1G can be used for catalog matching and distributor lookup.
TRANS PNP DARL 100V 2A IPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 041661-MJD117-1G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 25MHz
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I-Pak
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 40mA, 4A
Collector Cut-off Current(Max): 20μA
Typical Gain (hFE) (Min): 1000 @ 2A, 3V
Maximum Power Dissipation: 1.75W
Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
Darlington Transistors 2A 100V Bipolar Power PNP
Trans Darlington PNP 100V 2A Automotive 3-Pin(3+Tab) DPAK-3 Rail
TRANS PNP DARL 100V 2A IPAK
TRANSISTOR, PNP, -100V, -2A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:25MHz; Power Dissipation Pd:20W; DC Collector Current:-2A; DC Current Gain hFE:1000hFE; Transistor Case RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Darlington Transistors | Darlington Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 276-MJD117-1G | MJD117-1G | 041661-MJD117-1G | MJD117-1GOS-ND | MJD117-1G | 598-MJD117-1G | MJD117-1G | 30AC9899 |
| Product Name | 100V 2A Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJD117-1G | Single Bipolar Transistors | Darlington Transistors | Trans Darlington PNP 100V 2A Automotive 3-Pin(3+Tab) DPAK-3 Rail | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Pnp, -100V, -2A, To-252; Transistor Polarity Onsemi |
| Polarity | PNP | PNP - Darlington; PNP | PNP; PNP - Darlington | PNP | PNP; PNP | PNP | ||
| IC(max) | 2000 milliamps | 2000 milliamps | 2000 milliamps | 2000 milliamps | ||||
| VCEO | 100 volts | 100 volts | 100 volts | 100 volts | ||||
| VCBO | 100 volts | |||||||
| PD | 1750 milliwatts | 20000 milliwatts |