onsemi TRANSISTORS - Transistors (BJT) - Single - MJD112TF MJD112TF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 003587-MJD112TF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 25MHz Transistor Polarity: NPN - Darlington Family Name: MJD112 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 20μA Typical Gain (hFE) (Min): 1000 @ 2A, 3V Maximum Power Dissipation: 1.75W Alternative Parts (Cross-Reference): MJD112; 2SD1980TL; 2SD1980; MJD112T4; Introduction Date: June 08, 2001 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs
  • TRANSISTORS - Transistors (BJT) - Single - MJD112TF - 003587-MJD112TF - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - MJD112TFTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD112TF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 003587-MJD112TF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 25MHz Transistor Polarity: NPN - Darlington Family Name: MJD112 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 20μA Typical Gain (hFE) (Min): 1000 @ 2A, 3V Maximum Power Dissipation: 1.75W Alternative Parts (Cross-Reference): MJD112; 2SD1980TL; 2SD1980; MJD112T4; Introduction Date: June 08, 2001 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJD112TF - 003587-MJD112TF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD112TF
003587-MJD112TF
TRANSISTORS - Transistors (BJT) - Single - MJD112TF 003587-MJD112TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 003587-MJD112TF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 25MHz Transistor Polarity: NPN - Darlington Family Name: MJD112 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D-Pak Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 20μA Typical Gain (hFE) (Min): 1000 @ 2A, 3V Maximum Power Dissipation: 1.75W Alternative Parts (Cross-Reference): MJD112; 2SD1980TL; 2SD1980; MJD112T4; Introduction Date: June 08, 2001 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 003587-MJD112TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 25MHz
Transistor Polarity: NPN - Darlington
Family Name: MJD112
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D-Pak
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 40mA, 4A
Collector Cut-off Current(Max): 20μA
Typical Gain (hFE) (Min): 1000 @ 2A, 3V
Maximum Power Dissipation: 1.75W
Alternative Parts (Cross-Reference): MJD112; 2SD1980TL; 2SD1980; MJD112T4;
Introduction Date: June 08, 2001
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2k pcs

Buy Now Datasheet
Single Bipolar Transistors - MJD112TFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD112TFTR-ND
Single Bipolar Transistors MJD112TFTR-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount D-Pak

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount D-Pak

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD112TF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD112TF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD112TF
TRANS NPN DARL 100V 2A DPAK

TRANS NPN DARL 100V 2A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Darlington Transistors Transistors Bipolar RF Transistors
Product Number 003587-MJD112TF MJD112TFTR-ND MJD112TF
Product Name TRANSISTORS - Transistors (BJT) - Single - MJD112TF Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Darlington NPN
VCEO 100 volts 100 volts
IC(max) 2000 milliamps 2000 milliamps
PD 1750 milliwatts
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