onsemi TRANSISTORS - Transistors (BJT) - Single - MJD112RLG MJD112RLG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 003588-MJD112RLG Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 25MHz Transistor Polarity: NPN - Darlington Family Name: MJD112 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 20μA Typical Gain (hFE) (Min): 1000 @ 2A, 3V Maximum Power Dissipation: 1.75W Alternative Parts (Cross-Reference): CJD112 BK Lead Free; CJD112 TR13 ; CJD112; CJD112 TR13 Lead Free; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors (BJT) - Single - MJD112RLG - 003588-MJD112RLG - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - MJD112RLGOSTR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - MJD112RLGOSCT-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - MJD112RLGOSDKR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - MJD112RLG - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD112RLG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Darlington Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi - 71J5846 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 003588-MJD112RLG Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 25MHz Transistor Polarity: NPN - Darlington Family Name: MJD112 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 20μA Typical Gain (hFE) (Min): 1000 @ 2A, 3V Maximum Power Dissipation: 1.75W Alternative Parts (Cross-Reference): CJD112 BK Lead Free; CJD112 TR13 ; CJD112; CJD112 TR13 Lead Free; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJD112RLG - 003588-MJD112RLG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD112RLG
003588-MJD112RLG
TRANSISTORS - Transistors (BJT) - Single - MJD112RLG 003588-MJD112RLG
Manufacturer: ON Semiconductor Win Source Part Number: 003588-MJD112RLG Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 25MHz Transistor Polarity: NPN - Darlington Family Name: MJD112 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 20μA Typical Gain (hFE) (Min): 1000 @ 2A, 3V Maximum Power Dissipation: 1.75W Alternative Parts (Cross-Reference): CJD112 BK Lead Free; CJD112 TR13 ; CJD112; CJD112 TR13 Lead Free; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 003588-MJD112RLG
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 25MHz
Transistor Polarity: NPN - Darlington
Family Name: MJD112
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 40mA, 4A
Collector Cut-off Current(Max): 20μA
Typical Gain (hFE) (Min): 1000 @ 2A, 3V
Maximum Power Dissipation: 1.75W
Alternative Parts (Cross-Reference): CJD112 BK Lead Free; CJD112 TR13 ; CJD112; CJD112 TR13 Lead Free;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - MJD112RLGOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD112RLGOSTR-ND
Single Bipolar Transistors MJD112RLGOSTR-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD112RLGOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD112RLGOSCT-ND
Single Bipolar Transistors MJD112RLGOSCT-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD112RLGOSDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD112RLGOSDKR-ND
Single Bipolar Transistors MJD112RLGOSDKR-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Buy Now Datasheet
Single Bipolar Transistors - MJD112RLG - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD112RLG
Single Bipolar Transistors MJD112RLG
TRANS NPN DARL 100V 2A DPAK

TRANS NPN DARL 100V 2A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD112RLG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD112RLG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD112RLG
TRANS NPN DARL 100V 2A DPAK

TRANS NPN DARL 100V 2A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Darlington Transistors
MJD112RLG
Darlington Transistors MJD112RLG
Darlington Transistors 2A 100V Bipolar Power NPN

Darlington Transistors 2A 100V Bipolar Power NPN

Buy Now Datasheet
Darlington Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi - 71J5846 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Darlington Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi
71J5846
Darlington Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi 71J5846
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:2A; Power Dissipation Pd:20W; DC Current Gain hFE:12000hFE; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

DARLINGTON TRANSISTOR, NPN, 100V, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:2A; Power Dissipation Pd:20W; DC Current Gain hFE:12000hFE; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Darlington Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Darlington Transistors Darlington Transistors
Product Number 003588-MJD112RLG MJD112RLGOSTR-ND MJD112RLG MJD112RLG MJD112RLG 71J5846
Product Name TRANSISTORS - Transistors (BJT) - Single - MJD112RLG Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistors Darlington Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi
Polarity NPN; NPN - Darlington NPN NPN - Darlington; NPN NPN
VCEO 100 volts 100 volts 100 volts
IC(max) 2000 milliamps 2000 milliamps 2000 milliamps 2000 milliamps
PD 1750 milliwatts 20000 milliwatts
TJ -65 to 150 C (-85 to 302 F) -65 to 150 C (-85 to 302 F)
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