onsemi 2.0 A 100 V DPAK Bipolar Transistor MJD112RL

2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL Product overview: MJD112RL from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.0 A, 100 V, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 2.0 A, 100 V, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD112RL can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Manufacturer: ON Semiconductor
Win Source Part Number: 1223629-MJD112RL
Packaging: Tape and Reel
Mounting Style: SMD
Transistor Type: NPN - Darlington
Frequency - Transition: 25MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: DPAK
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Current - Collector Cutoff (Maximum): 20μA
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Family Part Number: MJD112
Manufacturer Pack Quantity: 1,800
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 3V at 40mA, 4A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 2A, 3V
Maximum Power: 1.75W