onsemi TRANSISTORS - Transistors (BJT) - Single - MJD112RL MJD112RL

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1223629-MJD112RL Packaging: Tape and Reel Mounting Style: SMD Transistor Type: NPN - Darlington Frequency - Transition: 25MHz Categories: Discrete Semiconductor Products Supplier Device Package: DPAK Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 20μA Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Family Part Number: MJD112 Manufacturer Pack Quantity: 1,800 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 40mA, 4A DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 2A, 3V Maximum Power: 1.75W
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1223629-MJD112RL Packaging: Tape and Reel Mounting Style: SMD Transistor Type: NPN - Darlington Frequency - Transition: 25MHz Categories: Discrete Semiconductor Products Supplier Device Package: DPAK Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 20μA Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Family Part Number: MJD112 Manufacturer Pack Quantity: 1,800 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 40mA, 4A DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 2A, 3V Maximum Power: 1.75W
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJD112RL - 1223629-MJD112RL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD112RL
1223629-MJD112RL
TRANSISTORS - Transistors (BJT) - Single - MJD112RL 1223629-MJD112RL
Manufacturer: ON Semiconductor Win Source Part Number: 1223629-MJD112RL Packaging: Tape and Reel Mounting Style: SMD Transistor Type: NPN - Darlington Frequency - Transition: 25MHz Categories: Discrete Semiconductor Products Supplier Device Package: DPAK Status: Obsolete Temperature Range - Operating: -65°C ~ 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 20μA Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Family Part Number: MJD112 Manufacturer Pack Quantity: 1,800 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 40mA, 4A DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 2A, 3V Maximum Power: 1.75W

Manufacturer: ON Semiconductor
Win Source Part Number: 1223629-MJD112RL
Packaging: Tape and Reel
Mounting Style: SMD
Transistor Type: NPN - Darlington
Frequency - Transition: 25MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: DPAK
Status: Obsolete
Temperature Range - Operating: -65°C ~ 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Current - Collector Cutoff (Maximum): 20μA
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Family Part Number: MJD112
Manufacturer Pack Quantity: 1,800
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 3V at 40mA, 4A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 2A, 3V
Maximum Power: 1.75W

Buy Now
Single Bipolar Transistors - MJD112RL-ND - DigiKey
Thief River Falls, MN, United States
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Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD112RL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD112RL
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD112RL
TRANS NPN DARL 100V 2A DPAK

TRANS NPN DARL 100V 2A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors
Product Number 1223629-MJD112RL MJD112RL-ND MJD112RL
Product Name TRANSISTORS - Transistors (BJT) - Single - MJD112RL Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
Packing Method Tape Reel; Tape and Reel Tape Reel; Tape & Reel (TR)
TJ -65 to 150 C (-85 to 302 F)
Power Gain 1000 dB
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