onsemi Single Bipolar Transistors MJD112G

Description
TRANS NPN DARL 100V 2A DPAK
Request a Quote Datasheet
Description
TRANS NPN DARL 100V 2A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJD112G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD112G
Single Bipolar Transistors MJD112G
TRANS NPN DARL 100V 2A DPAK

TRANS NPN DARL 100V 2A DPAK

Supplier's Site Datasheet
Singapore
100V 2A DPAK Bipolar Transistor
276-MJD112G
100V 2A DPAK Bipolar Transistor 276-MJD112G
NPN Darlington Transistor 100V 2A DPAK Product overview: MJD112G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD112G can be used for catalog matching and distributor lookup.

NPN Darlington Transistor 100V 2A DPAK Product overview: MJD112G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD112G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Darlington Pairs - 7905319 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
7905319
Darlington Pairs 7905319
NPN Darlington Power Trans. 100V 2A DPAK

NPN Darlington Power Trans. 100V 2A DPAK

Supplier's Site
Darlington Pairs - 1216413 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
1216413
Darlington Pairs 1216413
NPN Darlington Power Trans. 100V 2A DPAK

NPN Darlington Power Trans. 100V 2A DPAK

Supplier's Site
Single Bipolar Transistors - MJD112GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD112GOS-ND
Single Bipolar Transistors MJD112GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJD112G - 1077376-MJD112G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD112G
1077376-MJD112G
TRANSISTORS - Transistors (BJT) - Single - MJD112G 1077376-MJD112G
Manufacturer: ON Semiconductor Win Source Part Number: 1077376-MJD112G Packaging: Tube/Rail Mounting: SMD (SMT) Frequency - Transition: 25MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: DPAK-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 20μA Typical Gain (hFE) (Min): 1000 @ 2A, 3V Maximum Power Dissipation: 1.75W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1077376-MJD112G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Frequency - Transition: 25MHz
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: DPAK-3
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 40mA, 4A
Collector Cut-off Current(Max): 20μA
Typical Gain (hFE) (Min): 1000 @ 2A, 3V
Maximum Power Dissipation: 1.75W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD112G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD112G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD112G
TRANS NPN DARL 100V 2A DPAK

TRANS NPN DARL 100V 2A DPAK

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
MJD112G
Darlington Transistors MJD112G
Darlington Transistors 2A 100V Bipolar Power NPN

Darlington Transistors 2A 100V Bipolar Power NPN

Buy Now Datasheet
Darlington Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi - 42K1268 - Newark, An Avnet Company
Chicago, IL, United States
Darlington Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi
42K1268
Darlington Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi 42K1268
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:2A; Power Dissipation Pd:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

DARLINGTON TRANSISTOR, NPN, 100V, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:2A; Power Dissipation Pd:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 25 Mhz, 1.75 W, 2 A, 12000 Rohs Compliant Onsemi - 58M9087 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 25 Mhz, 1.75 W, 2 A, 12000 Rohs Compliant Onsemi
58M9087
Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 25 Mhz, 1.75 W, 2 A, 12000 Rohs Compliant Onsemi 58M9087
Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 25 MHz, 1.75 W, 2 A, 12000 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 25 MHz, 1.75 W, 2 A, 12000 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. RS Components, Ltd. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Bipolar RF Transistors Bipolar RF Transistors Darlington Transistors Transistors Transistors Bipolar RF Transistors Darlington Transistors Darlington Transistors Bipolar RF Transistors
Product Number MJD112G 276-MJD112G 7905319 MJD112GOS-ND 1077376-MJD112G MJD112G MJD112G 42K1268 58M9087
Product Name Single Bipolar Transistors 100V 2A DPAK Bipolar Transistor Darlington Pairs Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJD112G Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistors Darlington Transistor, Npn, 100V, D-Pak; Transistor Polarity Onsemi Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 25 Mhz, 1.75 W, 2 A, 12000 Rohs Compliant Onsemi
Polarity NPN - Darlington; NPN NPN NPN NPN NPN; NPN - Darlington NPN NPN
Package Type TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); Dpak (to-252) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; DPAK-3 TO-3 TO-3; TO-252 (DPAK)
IC(max) 2000 milliamps 2000 milliamps 2000 milliamps 2000 milliamps
VCEO 100 volts 100 volts 100 volts
Operating Frequency 25 MHz
Unlock Full Specs
to access all available technical data