onsemi Single Bipolar Transistors MJD112-1G

Description
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJD112-1GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD112-1GOS-ND
Single Bipolar Transistors MJD112-1GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK

Buy Now Datasheet
Singapore, Singapore
100V 2A 1.75W Bipolar Transistor
276-MJD112-1G
100V 2A 1.75W Bipolar Transistor 276-MJD112-1G
NPN Darlington Transistor, 100V, 2A, 1.75W, TO-251 Product overview: MJD112-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A, 1.75W. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, 1.75W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD112-1G can be used for catalog matching and distributor lookup.

NPN Darlington Transistor, 100V, 2A, 1.75W, TO-251 Product overview: MJD112-1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A, 1.75W. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, 1.75W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD112-1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Darlington Pairs - 7905315 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
7905315
Darlington Pairs 7905315
NPN Darlington Power Trans. 100V 2A IPAK

NPN Darlington Power Trans. 100V 2A IPAK

Supplier's Site
Darlington Pairs - 1784811 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
1784811
Darlington Pairs 1784811
NPN Darlington Power Trans. 100V 2A IPAK

NPN Darlington Power Trans. 100V 2A IPAK

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - MJD112-1G - 058920-MJD112-1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJD112-1G
058920-MJD112-1G
TRANSISTORS - Transistors (BJT) - Single - MJD112-1G 058920-MJD112-1G
Manufacturer: ON Semiconductor Win Source Part Number: 058920-MJD112-1G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 25MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 20μA Typical Gain (hFE) (Min): 1000 @ 2A, 3V Maximum Power Dissipation: 1.75W

Manufacturer: ON Semiconductor
Win Source Part Number: 058920-MJD112-1G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 25MHz
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I-Pak
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 40mA, 4A
Collector Cut-off Current(Max): 20μA
Typical Gain (hFE) (Min): 1000 @ 2A, 3V
Maximum Power Dissipation: 1.75W

Buy Now Datasheet
Darlington Transistor, Npn, 100V, Dpak-3; Transistor Polarity Onsemi - 26K4439 - Newark, An Avnet Company
Chicago, IL, United States
Darlington Transistor, Npn, 100V, Dpak-3; Transistor Polarity Onsemi
26K4439
Darlington Transistor, Npn, 100V, Dpak-3; Transistor Polarity Onsemi 26K4439
DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

DARLINGTON TRANSISTOR, NPN, 100V, DPAK-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Single Bipolar Transistors - MJD112-1G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD112-1G
Single Bipolar Transistors MJD112-1G
TRANS NPN DARL 100V 2A IPAK

TRANS NPN DARL 100V 2A IPAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
MJD112-1G
Darlington Transistors MJD112-1G
Darlington Transistors 2A 100V Bipolar Power NPN

Darlington Transistors 2A 100V Bipolar Power NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD112-1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD112-1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD112-1G
TRANS NPN DARL 100V 2A IPAK

TRANS NPN DARL 100V 2A IPAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. Win Source Electronics Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Darlington Transistors Darlington Transistors Transistors Darlington Transistors Bipolar RF Transistors Darlington Transistors Bipolar RF Transistors
Product Number MJD112-1GOS-ND 276-MJD112-1G 7905315 1784811 058920-MJD112-1G 26K4439 MJD112-1G MJD112-1G MJD112-1G
Product Name Single Bipolar Transistors 100V 2A 1.75W Bipolar Transistor Darlington Pairs Darlington Pairs TRANSISTORS - Transistors (BJT) - Single - MJD112-1G Darlington Transistor, Npn, 100V, Dpak-3; Transistor Polarity Onsemi Single Bipolar Transistors Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN NPN NPN; NPN - Darlington NPN NPN - Darlington; NPN
Package Type TO-251-3 Short Leads, IPAK, TO-251AA Ipak (to-251) IPAK SOT3; I-Pak TO-3; TO-252 (DPAK) TO-251-3 Short Leads, IPak, TO-251AA
IC(max) 2000 milliamps 2000 milliamps 2000 milliamps 2000 milliamps
VCEO 100 volts 100 volts 100 volts 100 volts
VCBO 100 volts
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