Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt, D2PAK 2 LEAD, 50-TUBE Product overview: MJB44H11G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10 A, 80 V. Search-friendly keywords include transistor, BJT, switching, amplification, 10 A, 80 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJB44H11G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN 80V 10A 50MHz 2W Surface Mount D²PAK
TRANS NPN 80V 10A D2PAK
Manufacturer: ON Semiconductor
Win Source Part Number: 1077375-MJB44H11G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Frequency - Transition: 50MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1V @ 400mA, 8A
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 40 @ 4A, 1V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
TRANS NPN 80V 10A D2PAK
POWER TRANSISTOR, NPN, 80V, D2-PAK, TRANSISTOR POLARITY:NPN, COLLECTOR EMITTER VOLTAGE V(BR)CEO:80V, DC COLLECTOR CURRENT:10A, POWER DISSIPATION PD:50W, TRANSISTOR MOUNTING:SURFACE MOUNT, NO. OF PINS:3PINS, DC CURRENT GAIN HFE:60HFE ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
POWER TRANSISTOR, NPN, 80V, D2-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; DC Collector Current:10A; Power Dissipation Pd:50W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; DC Current Gain hFE:60hFE RoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 80V, TO-263-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:40hFE; Transistor Case RoHS Compliant: Yes
Bipolar Transistors - BJT 8A 80V 50W NPN
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 276-MJB44H11G | MJB44H11GOS-ND | MJB44H11G | 1844959P | 1844309 | 1077375-MJB44H11G | MJB44H11G | 18706834 | 42K1267 | 82Y6984 | MJB44H11G |
| Product Name | 10 A 80 V Bipolar Transistor | Single Bipolar Transistors | Single Bipolar Transistors | Bipolar Transistors | Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - MJB44H11G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor | Power Transistor, Npn, 80V, D2-Pak; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 80V, To-263-3; Transistor Polarity Onsemi | Bipolar Transistors - BJT |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN; NPN | NPN | NPN | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263 | D2pak | SOT3; D2PAK | TO-3 | TO-3; TO-263 | ||||
| IC(max) | 10000 milliamps | 10000 milliamps | |||||||||
| VCEO | 80 volts | 80 volts | |||||||||
| Operating Frequency | 50 MHz |
