The MJB44H11G is an NPN silicon power transistor in a D2PAK surface mount package, rated for a collector-emitter voltage of 80 Vdc, a continuous collector current of 10 Adc, and a total power dissipation of 50 W at 25°C ambient. It features a maximum collector-emitter saturation voltage of 1.0 V at 8 A, a gain bandwidth product of 50 MHz, and thermal resistance from junction to case of 2.5 °C/W. The device meets UL 94 V-0 flammability standards and is Pb-free. It is qualified to AEC-Q101 and PPAP capable for automotive applications. Operating and storage junction temperature range is -55°C to 150°C.
POWER TRANSISTOR, NPN, 80V, D2-PAK; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:50W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:50MHzRoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 27AC8946 |
| Product Name | Power Transistor, Npn, 80V, D2-Pak; Transistor Polarity Onsemi |
| Transistor Type | Power Transistor, Npn, 80V, D2-Pak; Transistor Polarity Onsemi |
