TRANS NPN 100V 6A D2PAK
Manufacturer: ON Semiconductor
Win Source Part Number: 1223624-MJB41CT4G
Packaging: Reel - TR
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Power - Max: 2W
Transistor Type: NPN
Frequency - Transition: 3MHz
Family Name: MJB41C
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: D2PAK
Current - Collector (Ic) (Maximum): 6A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Maximum): 700μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 15 @ 3A, 4V
Alternative Parts (Cross-Reference): MJB41CG;
Introduction Date: March 12, 2001
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK
6A 100V NPN BJT Power Transistor, D2PAK Product overview: MJB41CT4G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6A, 100V. Search-friendly keywords include transistor, BJT, switching, amplification, 6A, 100V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJB41CT4G can be used for catalog matching and distributor lookup.
TRANS NPN 100V 6A D2PAK
POWER TRANSISTOR, NPN, 100V, D2-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:6A; Power Dissipation Pd:65W; DC Current Gain hFE:15hFE; No. of Pins:3Pins; Transistor Mounting:Surface MountRoHS Compliant: Yes
POWER TRANSISTOR, NPN, 100V, D2-PAK; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:6A; Power Dissipation Pd:65W; DC Current Gain hFE:30hFE; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating RoHS Compliant: Yes
Bipolar Transistors - BJT 6A 100V 65W NPN
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | MJB41CT4G | 1223624-MJB41CT4G | MJB41CT4GOSDKR-ND | 276-MJB41CT4G | MJB41CT4G | 09R9429 | 82Y6983 | MJB41CT4G |
| Product Name | Single Bipolar Transistors | Newest Parts - MJB41CT4G | Single Bipolar Transistors | 6A 100V Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Power Transistor, Npn, 100V, D2-Pak; Transistor Polarity Onsemi | Transistor, Bipol, Npn, 100V; Transistor Polarity Onsemi | Bipolar Transistors - BJT |
| Polarity | NPN; NPN | NPN | NPN | NPN | NPN | NPN | ||
| Package Type | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-3; TO-263 | |||
| IC(max) | 6000 milliamps | 6000 milliamps | 6000 milliamps | |||||
| VCEO | 100 volts | 100 volts | 100 volts | |||||
| Operating Frequency | 3 MHz | 3 MHz |
