onsemi Single Bipolar Transistors MJB41CT4G

Description
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - MJB41CT4GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJB41CT4GOSDKR-ND
Single Bipolar Transistors MJB41CT4GOSDKR-ND
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK

Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK

Buy Now Datasheet
Single Bipolar Transistors - MJB41CT4GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJB41CT4GOSCT-ND
Single Bipolar Transistors MJB41CT4GOSCT-ND
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK

Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK

Buy Now Datasheet
Single Bipolar Transistors - MJB41CT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJB41CT4GOSTR-ND
Single Bipolar Transistors MJB41CT4GOSTR-ND
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK

Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surface Mount D²PAK

Buy Now Datasheet
Newest Parts - MJB41CT4G - 1223624-MJB41CT4G - Win Source Electronics
Laguna Hills, CA, United States
Newest Parts - MJB41CT4G
1223624-MJB41CT4G
Newest Parts - MJB41CT4G 1223624-MJB41CT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1223624-MJB41CT4G Packaging: Reel - TR Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Power - Max: 2W Transistor Type: NPN Frequency - Transition: 3MHz Family Name: MJB41C Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: D2PAK Current - Collector (Ic) (Maximum): 6A Voltage - Collector Emitter Breakdown (Maximum): 100V Vce Saturation (Maximum) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Maximum): 700μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 15 @ 3A, 4V Alternative Parts (Cross-Reference): MJB41CG; Introduction Date: March 12, 2001 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1223624-MJB41CT4G
Packaging: Reel - TR
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Power - Max: 2W
Transistor Type: NPN
Frequency - Transition: 3MHz
Family Name: MJB41C
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: D2PAK
Current - Collector (Ic) (Maximum): 6A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Maximum): 700μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 15 @ 3A, 4V
Alternative Parts (Cross-Reference): MJB41CG;
Introduction Date: March 12, 2001
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

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Single Bipolar Transistors - MJB41CT4G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJB41CT4G
Single Bipolar Transistors MJB41CT4G
TRANS NPN 100V 6A D2PAK

TRANS NPN 100V 6A D2PAK

Supplier's Site Datasheet
Power Transistor, Npn, 100V, D2-Pak; Transistor Polarity Onsemi - 09R9429 - Newark, An Avnet Company
Chicago, IL, United States
Power Transistor, Npn, 100V, D2-Pak; Transistor Polarity Onsemi
09R9429
Power Transistor, Npn, 100V, D2-Pak; Transistor Polarity Onsemi 09R9429
POWER TRANSISTOR, NPN, 100V, D2-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:6A; Power Dissipation Pd:65W; DC Current Gain hFE:15hFE; No. of Pins:3Pins; Transistor Mounting:Surface MountRoHS Compliant: Yes

POWER TRANSISTOR, NPN, 100V, D2-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:6A; Power Dissipation Pd:65W; DC Current Gain hFE:15hFE; No. of Pins:3Pins; Transistor Mounting:Surface MountRoHS Compliant: Yes

Supplier's Site
Power Transistor, Npn, 100V, D2-Pak; Transistor Polarity Onsemi - 42K1264 - Newark, An Avnet Company
Chicago, IL, United States
Power Transistor, Npn, 100V, D2-Pak; Transistor Polarity Onsemi
42K1264
Power Transistor, Npn, 100V, D2-Pak; Transistor Polarity Onsemi 42K1264
POWER TRANSISTOR, NPN, 100V, D2-PAK; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:6A; Power Dissipation Pd:65W; DC Current Gain hFE:30hFE; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

POWER TRANSISTOR, NPN, 100V, D2-PAK; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:6A; Power Dissipation Pd:65W; DC Current Gain hFE:30hFE; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Transistor, Bipol, Npn, 100V; Transistor Polarity Onsemi - 82Y6983 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipol, Npn, 100V; Transistor Polarity Onsemi
82Y6983
Transistor, Bipol, Npn, 100V; Transistor Polarity Onsemi 82Y6983
TRANSISTOR, BIPOL, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating RoHS Compliant: Yes

TRANSISTOR, BIPOL, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJB41CT4G
Bipolar Transistors - BJT MJB41CT4G
Bipolar Transistors - BJT 6A 100V 65W NPN

Bipolar Transistors - BJT 6A 100V 65W NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJB41CT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJB41CT4G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJB41CT4G
TRANS NPN 100V 6A D2PAK

TRANS NPN 100V 6A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MJB41CT4GOSDKR-ND 1223624-MJB41CT4G MJB41CT4G 09R9429 82Y6983 MJB41CT4G MJB41CT4G
Product Name Single Bipolar Transistors Newest Parts - MJB41CT4G Single Bipolar Transistors Power Transistor, Npn, 100V, D2-Pak; Transistor Polarity Onsemi Transistor, Bipol, Npn, 100V; Transistor Polarity Onsemi Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN NPN NPN
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3 TO-3; TO-263
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
TJ -65 to 150 C (-85 to 302 F) -65 to 150 C (-85 to 302 F)
Power Gain 15 dB
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