onsemi TRANSISTORS - Transistors (BJT) - Single - MJ14002G MJ14002G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1223572-MJ14002G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-204AE Power - Max: 300W Transistor Type: NPN Family Name: MJ14002 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 60A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 3V @ 12A, 60A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 15 @ 50A, 3V Alternative Parts (Cross-Reference): 2N5686; 2N6032; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1223572-MJ14002G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-204AE Power - Max: 300W Transistor Type: NPN Family Name: MJ14002 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 60A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 3V @ 12A, 60A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 15 @ 50A, 3V Alternative Parts (Cross-Reference): 2N5686; 2N6032; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJ14002G - 1223572-MJ14002G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJ14002G
1223572-MJ14002G
TRANSISTORS - Transistors (BJT) - Single - MJ14002G 1223572-MJ14002G
Manufacturer: ON Semiconductor Win Source Part Number: 1223572-MJ14002G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-204AE Power - Max: 300W Transistor Type: NPN Family Name: MJ14002 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 60A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 3V @ 12A, 60A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 15 @ 50A, 3V Alternative Parts (Cross-Reference): 2N5686; 2N6032; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 1223572-MJ14002G
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-204AE
Power - Max: 300W
Transistor Type: NPN
Family Name: MJ14002
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-3
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 3V @ 12A, 60A
Current - Collector Cutoff (Maximum): 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 15 @ 50A, 3V
Alternative Parts (Cross-Reference): 2N5686; 2N6032;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single Bipolar Transistors - MJ14002GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJ14002GOS-ND
Single Bipolar Transistors MJ14002GOS-ND
Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-204 (TO-3)

Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-204 (TO-3)

Buy Now Datasheet
Bipolar Transistors - 1250064 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1250064
Bipolar Transistors 1250064
BJT,NPN,60A,80V,TO-2 04-2

BJT,NPN,60A,80V,TO-204-2

Supplier's Site
Singapore
60 A 80 V Bipolar Transistor
276-MJ14002G
60 A 80 V Bipolar Transistor 276-MJ14002G
60 A, 80 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY Product overview: MJ14002G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 A, 80 V. Search-friendly keywords include transistor, BJT, switching, amplification, 60 A, 80 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJ14002G can be used for catalog matching and distributor lookup.

60 A, 80 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY Product overview: MJ14002G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 A, 80 V. Search-friendly keywords include transistor, BJT, switching, amplification, 60 A, 80 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJ14002G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - MJ14002G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJ14002G
Single Bipolar Transistors MJ14002G
TRANS NPN 80V 60A TO204

TRANS NPN 80V 60A TO204

Supplier's Site Datasheet
Bipolar Transistor, Npn, 80V, To-3; Transistor Polarity Onsemi - 26K4509 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 80V, To-3; Transistor Polarity Onsemi
26K4509
Bipolar Transistor, Npn, 80V, To-3; Transistor Polarity Onsemi 26K4509
BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJ14002G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJ14002G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJ14002G
TRANS NPN 80V 60A TO204

TRANS NPN 80V 60A TO204

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJ14002G
Bipolar Transistors - BJT MJ14002G
Bipolar Transistors - BJT 60A 80V 300W NPN

Bipolar Transistors - BJT 60A 80V 300W NPN

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1223572-MJ14002G MJ14002GOS-ND 1250064 276-MJ14002G MJ14002G 26K4509 MJ14002G MJ14002G
Product Name TRANSISTORS - Transistors (BJT) - Single - MJ14002G Single Bipolar Transistors Bipolar Transistors 60 A 80 V Bipolar Transistor Single Bipolar Transistors Bipolar Transistor, Npn, 80V, To-3; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN NPN NPN; NPN NPN
Package Type TO-3; SOT3 TO-204AE To-204 TO-204AE TO-3
Packing Method Tray; Tray Tray
TJ -65 to 200 C (-85 to 392 F) -65 to 200 C (-85 to 392 F)
Power Gain 15 dB
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