60 A, 80 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY Product overview: MJ14002G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 A, 80 V. Search-friendly keywords include transistor, BJT, switching, amplification, 60 A, 80 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJ14002G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1223572-MJ14002G
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-204AE
Power - Max: 300W
Transistor Type: NPN
Family Name: MJ14002
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-3
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 3V @ 12A, 60A
Current - Collector Cutoff (Maximum): 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 15 @ 50A, 3V
Alternative Parts (Cross-Reference): 2N5686; 2N6032;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
TRANS NPN 80V 60A TO204
Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-204 (TO-3)
TRANS NPN 80V 60A TO204
BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes
Bipolar Transistors - BJT 60A 80V 300W NPN
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-MJ14002G | 1223572-MJ14002G | MJ14002G | MJ14002GOS-ND | 1250064 | MJ14002G | 26K4509 | MJ14002G |
| Product Name | 60 A 80 V Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - MJ14002G | Single Bipolar Transistors | Single Bipolar Transistors | Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 80V, To-3; Transistor Polarity Onsemi | Bipolar Transistors - BJT |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN | |||
| Package Type | TO-3; SOT3 | TO-204AE | TO-204AE | To-204 | TO-3 | |||
| Packing Method | Tray; Tray | Tray | ||||||
| TJ | -65 to 200 C (-85 to 392 F) | -65 to 200 C (-85 to 392 F) | ||||||
| Power Gain | 15 dB |
