The MJ14002 is an NPN silicon power transistor designed for high-power amplifier and switching applications, with a continuous collector current rating of 60 A and a collector-emitter voltage rating of 80 V. It is packaged in a TO-204 (TO-3) case, measuring up to 38.86 mm in height and 26.67 mm in base diameter. The device has a maximum power dissipation of 300 W at a case temperature of 25°C, derating at 1.71 W/°C above that point, and a thermal resistance from junction to case of 0.584°C/W. DC current gain ranges from 15 to 100 at a collector current of 50 A, with a maximum collector-emitter saturation voltage of 2.5 V at 50 A collector current. The device meets RoHS standards and is available in Pb-free packages.
TRANS PWR NPN 60A 80V TO3 Product overview: MJ14002 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60A, 80V. Search-friendly keywords include transistor, BJT, switching, amplification, 60A, 80V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJ14002 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MJ14002 |
| Product Name | 60A 80V Bipolar Transistor |
| Package Type | Tray |
