The MJ11032G is an NPN silicon power transistor in a TO-204 (TO-3) case, designed for high-current complementary amplifier applications. It has a collector-emitter voltage rating of 120 Vdc, a continuous collector current of 50 Adc, and a total power dissipation of 300 W at TC = 25°C. The device features a minimum DC current gain of 400 at IC = 50 Adc and includes built-in base-emitter shunt resistor and diode protection. The junction temperature range is -55 to +200°C, with a thermal resistance from junction to case of 0.58 °C/W. The package is Pb-free and meets RoHS standards.
BIPOLAR TRANSISTOR, NPN, 120V, TO-204; Transistor Polarity:NPN; Collector Emitter Voltage Max:120V; Continuous Collector Current:50A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 27AC8998 |
| Product Name | Bipolar Transistor, Npn, 120V, To-204; Transistor Polarity Onsemi |
| Polarity | NPN |
