onsemi TRANSISTORS - Transistors (BJT) - Single - MJ11022G MJ11022G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1223558-MJ11022G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-204AA, TO-3 Power - Max: 175W Transistor Type: NPN - Darlington Family Name: MJ11022 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 15A Voltage - Collector Emitter Breakdown (Maximum): 250V Vce Saturation (Maximum) @ Ib, Ic: 3.4V @ 150mA, 15A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 400 @ 10A, 5V Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Motor Drive & Control
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1223558-MJ11022G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-204AA, TO-3 Power - Max: 175W Transistor Type: NPN - Darlington Family Name: MJ11022 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 15A Voltage - Collector Emitter Breakdown (Maximum): 250V Vce Saturation (Maximum) @ Ib, Ic: 3.4V @ 150mA, 15A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 400 @ 10A, 5V Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Motor Drive & Control
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJ11022G - 1223558-MJ11022G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJ11022G
1223558-MJ11022G
TRANSISTORS - Transistors (BJT) - Single - MJ11022G 1223558-MJ11022G
Manufacturer: ON Semiconductor Win Source Part Number: 1223558-MJ11022G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-204AA, TO-3 Power - Max: 175W Transistor Type: NPN - Darlington Family Name: MJ11022 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 15A Voltage - Collector Emitter Breakdown (Maximum): 250V Vce Saturation (Maximum) @ Ib, Ic: 3.4V @ 150mA, 15A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 400 @ 10A, 5V Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2025 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Motor Drive & Control

Manufacturer: ON Semiconductor
Win Source Part Number: 1223558-MJ11022G
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-204AA, TO-3
Power - Max: 175W
Transistor Type: NPN - Darlington
Family Name: MJ11022
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-3
Current - Collector (Ic) (Maximum): 15A
Voltage - Collector Emitter Breakdown (Maximum): 250V
Vce Saturation (Maximum) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Maximum): 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 400 @ 10A, 5V
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Motor Drive & Control

Buy Now Datasheet
Single Bipolar Transistors - MJ11022GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJ11022GOS-ND
Single Bipolar Transistors MJ11022GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 250V 15A 175W Through Hole TO-204 (TO-3)

Bipolar (BJT) Transistor NPN - Darlington 250V 15A 175W Through Hole TO-204 (TO-3)

Buy Now Datasheet
Singapore
250V 15A Bipolar Transistor
276-MJ11022G
250V 15A Bipolar Transistor 276-MJ11022G
250V 15A NPN Darlington Power BJT, TO-204 Product overview: MJ11022G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 15A. Search-friendly keywords include transistor, BJT, switching, amplification, 250V, 15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJ11022G can be used for catalog matching and distributor lookup.

250V 15A NPN Darlington Power BJT, TO-204 Product overview: MJ11022G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 15A. Search-friendly keywords include transistor, BJT, switching, amplification, 250V, 15A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJ11022G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 18722375 - Radwell International
Willingboro, NJ, United States
Transistor
18722375
Transistor 18722375
BIPOLAR TRANSISTOR,TRANSISTO R POLARITY: NPN, COLLECTOR EMITTER VOLTAGE V(BR)CEO:250V, DC COLLECTOR CURRENT:15A, POWER DISSIPATION PD:150W, TRANSISTOR MOUNTING:THROUGH HOLE, NO. OF PINS:2PINS, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

BIPOLAR TRANSISTOR,TRANSISTOR POLARITY: NPN, COLLECTOR EMITTER VOLTAGE V(BR)CEO:250V, DC COLLECTOR CURRENT:15A, POWER DISSIPATION PD:150W, TRANSISTOR MOUNTING:THROUGH HOLE, NO. OF PINS:2PINS, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Bipolar Transistor, Npn, 250V; Transistor Polarity Onsemi - 42K1311 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 250V; Transistor Polarity Onsemi
42K1311
Bipolar Transistor, Npn, 250V; Transistor Polarity Onsemi 42K1311
BIPOLAR TRANSISTOR, NPN, 250V; Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 250V; Transistor Polarity:NPN; Collector Emitter Voltage Max:250V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
MJ11022G
Darlington Transistors MJ11022G
Darlington Transistors BIP T03 NPN 15A 250V

Darlington Transistors BIP T03 NPN 15A 250V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJ11022G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJ11022G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJ11022G
TRANS NPN DARL 250V 15A TO204

TRANS NPN DARL 250V 15A TO204

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Radwell International Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors Darlington Transistors Bipolar RF Transistors
Product Number 1223558-MJ11022G MJ11022GOS-ND 276-MJ11022G 18722375 42K1311 MJ11022G MJ11022G
Product Name TRANSISTORS - Transistors (BJT) - Single - MJ11022G Single Bipolar Transistors 250V 15A Bipolar Transistor Transistor Bipolar Transistor, Npn, 250V; Transistor Polarity Onsemi Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN NPN
Package Type TO-3; SOT3 TO-3; TO-204AA, TO-3 TO-3
Packing Method Tray; Tray Tray
TJ -65 to 200 C (-85 to 392 F) -65 C (-85 F)
Power Gain 400 dB
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