onsemi Single Bipolar Transistors MJ11016

Description
Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJ11016OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJ11016OS-ND
Single Bipolar Transistors MJ11016OS-ND
Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)

Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)

Buy Now Datasheet
Single Bipolar Transistors - MJ11016 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJ11016
Single Bipolar Transistors MJ11016
TRANS NPN DARL 120V 30A TO204

TRANS NPN DARL 120V 30A TO204

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJ11016 - 1223551-MJ11016 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJ11016
1223551-MJ11016
TRANSISTORS - Transistors (BJT) - Single - MJ11016 1223551-MJ11016
Manufacturer: ON Semiconductor Win Source Part Number: 1223551-MJ11016 Packaging: Tray Mounting Style: Through Hole Transistor Type: NPN - Darlington Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-204 (TO-3) Status: Obsolete Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-204AA, TO-3 Current - Collector (Ic) (Maximum): 30A Voltage - Collector Emitter Breakdown (Maximum): 120V Current - Collector Cutoff (Maximum): 1mA Alternative Parts (Cross-Reference): MJ11016G; MJ11016 Lead Free; MJ11016; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Application Field: Used in Audio Manufacturer Pack Quantity: 100 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 4V at 300mA, 30A DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 20A, 5V Maximum Power: 200W

Manufacturer: ON Semiconductor
Win Source Part Number: 1223551-MJ11016
Packaging: Tray
Mounting Style: Through Hole
Transistor Type: NPN - Darlington
Frequency - Transition: 4MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-204 (TO-3)
Status: Obsolete
Temperature Range - Operating: -55°C ~ 200°C
Manufacturer Homepage: www.mospec.com.tw
Manufacturer Package: TO-204AA, TO-3
Current - Collector (Ic) (Maximum): 30A
Voltage - Collector Emitter Breakdown (Maximum): 120V
Current - Collector Cutoff (Maximum): 1mA
Alternative Parts (Cross-Reference): MJ11016G; MJ11016 Lead Free; MJ11016;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Application Field: Used in Audio
Manufacturer Pack Quantity: 100
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 4V at 300mA, 30A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 20A, 5V
Maximum Power: 200W

Buy Now Datasheet
Singapore
30A 120V Bipolar Transistor
276-MJ11016
30A 120V Bipolar Transistor 276-MJ11016
30A, 120V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 1-07, TO-3, 2 PIN Product overview: MJ11016 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30A, 120V. Search-friendly keywords include transistor, BJT, switching, amplification, 30A, 120V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJ11016 can be used for catalog matching and distributor lookup.

30A, 120V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 1-07, TO-3, 2 PIN Product overview: MJ11016 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30A, 120V. Search-friendly keywords include transistor, BJT, switching, amplification, 30A, 120V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJ11016 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 48563386 - Radwell International
Willingboro, NJ, United States
Transistor
48563386
Transistor 48563386
TRANSISTOR, 30 AMP, 120 V, 2 PIN, TO-3 200 WATT. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, 30 AMP, 120 V, 2 PIN, TO-3 200 WATT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Radwell International
Product Category Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors RF Transistors
Product Number MJ11016OS-ND MJ11016 1223551-MJ11016 276-MJ11016 48563386
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJ11016 30A 120V Bipolar Transistor Transistor
Polarity NPN NPN - Darlington; NPN NPN NPN
Package Type TO-3; TO-204AA, TO-3 TO-204AA, TO-3 TO-3; SOT3
IC(max) 30000 milliamps 30000 milliamps
VCEO 120 volts 120 volts
Operating Frequency 4 MHz 4 MHz
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