onsemi TRANSISTORS - Transistors (BJT) - Single - MJ11012G MJ11012G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 788840-MJ11012G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 200°C (TJ) Package: TO-204AA, TO-3 Power - Max: 200W Transistor Type: NPN - Darlington Frequency - Transition: 4MHz Family Name: MJ11012 Categories: Discrete Semiconductor Products Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 30A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 20A, 5V Alternative Parts (Cross-Reference): MJ11012; PMD18K60; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 788840-MJ11012G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 200°C (TJ) Package: TO-204AA, TO-3 Power - Max: 200W Transistor Type: NPN - Darlington Frequency - Transition: 4MHz Family Name: MJ11012 Categories: Discrete Semiconductor Products Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 30A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 20A, 5V Alternative Parts (Cross-Reference): MJ11012; PMD18K60; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJ11012G - 788840-MJ11012G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - MJ11012G
788840-MJ11012G
TRANSISTORS - Transistors (BJT) - Single - MJ11012G 788840-MJ11012G
Manufacturer: ON Semiconductor Win Source Part Number: 788840-MJ11012G Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 200°C (TJ) Package: TO-204AA, TO-3 Power - Max: 200W Transistor Type: NPN - Darlington Frequency - Transition: 4MHz Family Name: MJ11012 Categories: Discrete Semiconductor Products Manufacturer Package: TO-3 Current - Collector (Ic) (Maximum): 30A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 20A, 5V Alternative Parts (Cross-Reference): MJ11012; PMD18K60; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Mexico Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 788840-MJ11012G
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 200°C (TJ)
Package: TO-204AA, TO-3
Power - Max: 200W
Transistor Type: NPN - Darlington
Frequency - Transition: 4MHz
Family Name: MJ11012
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3
Current - Collector (Ic) (Maximum): 30A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Maximum): 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 20A, 5V
Alternative Parts (Cross-Reference): MJ11012; PMD18K60;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Darlington Pairs - 8624954 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
8624954
Darlington Pairs 8624954
BJT,NPN,Darlington,3 0A,60V,TO-204-2

BJT,NPN,Darlington,30A,60V,TO-204-2

Supplier's Site
Darlington Pairs - 1630033 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
1630033
Darlington Pairs 1630033
BJT,NPN,Darlington,3 0A,60V,TO-204-2

BJT,NPN,Darlington,30A,60V,TO-204-2

Supplier's Site
Single Bipolar Transistors - MJ11012GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJ11012GOS-ND
Single Bipolar Transistors MJ11012GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)

Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)

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Trans Darlington NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray - 598-MJ11012G - Utmel Electronic Limited
Hong Kong, China
Trans Darlington NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray
598-MJ11012G
Trans Darlington NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray 598-MJ11012G
Trans Darlington NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray

Trans Darlington NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJ11012G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJ11012G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJ11012G
TRANS NPN DARL 60V 30A TO204

TRANS NPN DARL 60V 30A TO204

Supplier's Site
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity Onsemi - 42K1309 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity Onsemi
42K1309
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity Onsemi 42K1309
BIPOLAR TRANSISTOR, NPN, 60V TO-204; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:30A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 60V TO-204; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:30A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
MJ11012G
Darlington Transistors MJ11012G
Darlington Transistors 30A 60V Bipolar Power NPN

Darlington Transistors 30A 60V Bipolar Power NPN

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Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Darlington Transistors Darlington Transistors Transistors Darlington Transistors Bipolar RF Transistors Bipolar RF Transistors Darlington Transistors
Product Number 788840-MJ11012G 8624954 MJ11012GOS-ND 598-MJ11012G MJ11012G 42K1309 MJ11012G
Product Name TRANSISTORS - Transistors (BJT) - Single - MJ11012G Darlington Pairs Single Bipolar Transistors Trans Darlington NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistor, Npn, 60V To-204; Transistor Polarity Onsemi Darlington Transistors
Polarity NPN NPN NPN NPN; NPN NPN
IC(max) 1 milliamps 30000 milliamps 30000 milliamps 30000 milliamps
TJ -55 to 200 C (-67 to 392 F) -55 to 200 C (-67 to 392 F)
Package Type TO-3; SOT3 To-204aa TO-3; TO-204AA, TO-3 TO-3
Packing Method Tray; Tray Tape Reel; Tray Tray
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