onsemi Single FETs, MOSFETs MGSF1N02LT1

Description
N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Description
N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MGSF1N02LT1OSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MGSF1N02LT1OSTR-ND
Single FETs, MOSFETs MGSF1N02LT1OSTR-ND
N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)

N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
FETs - Single - MGSF1N02LT1 - 801258-MGSF1N02LT1 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - MGSF1N02LT1
801258-MGSF1N02LT1
FETs - Single - MGSF1N02LT1 801258-MGSF1N02LT1
Manufacturer: ON Semiconductor Win Source Part Number: 801258-MGSF1N02LT1 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20V Part Status: Obsolete (End Of Life) Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Maximum): 400mW Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 90mOhm at 1.2A, 10V Input Capacitance (Ciss) (Maximum) at Vds: 125pF at 5V Current - Continuous Drain (Id) at 25°C: 750mA Vgs(th) (Maximum) at Id: 2.4V at 250μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 801258-MGSF1N02LT1
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Part Status: Obsolete (End Of Life)
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 400mW
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 90mOhm at 1.2A, 10V
Input Capacitance (Ciss) (Maximum) at Vds: 125pF at 5V
Current - Continuous Drain (Id) at 25°C: 750mA
Vgs(th) (Maximum) at Id: 2.4V at 250μA
Maximum Vgs: ±20V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MGSF1N02LT1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MGSF1N02LT1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MGSF1N02LT1
MOSFET N-CH 20V 750MA SOT23-3

MOSFET N-CH 20V 750MA SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MGSF1N02LT1OSTR-ND 801258-MGSF1N02LT1 MGSF1N02LT1
Product Name Single FETs, MOSFETs FETs - Single - MGSF1N02LT1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
MOSFET Operating Mode Enhancement
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