The MCH6601 is a dual P-channel power MOSFET in an MCPH6 package, designed for low-power switching applications. It has a drain-to-source voltage rating of -30 V and a continuous drain current of -0.2 A. Each MOSFET has a maximum on-state resistance of 15.4 Ω at -2.5 V gate drive and 10.4 Ω at -4 V gate drive. The device supports 1.5 V drive compatibility and features a total gate charge of 1.43 nC. The package measures 2.0 mm × 1.2 mm × 0.65 mm and complies with JEITA, JEDEC SC-88, SC-70-6, and SOT-363 standards. It is rated for a channel temperature up to 150 °C and operates within a storage temperature range of -55 °C to +150 °C. The part is RoHS compliant and supplied in a 3,000 pcs./reel tape-and-reel configuration.
MOSFET 2P-CH 30V 0.2A MCPH6 Product overview: MCH6601 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-MCH6601 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-MCH6601 |
| Product Name | 30V 0.2A MOSFET Transistor |
| PD | 800 milliwatts |
