The RF Transistor, part number 07AH4111, is an NPN device designed for applications requiring low noise and high-frequency performance. It operates at a maximum collector-emitter voltage of 12V and supports a collector current of up to 100mA. The transistor features a high cut-off frequency of 10GHz, making it suitable for RF applications. It has a typical noise figure of 1.2dB at 1GHz, indicating its effectiveness in low-noise applications. The device is halogen-free and compliant with RoHS standards, ensuring it meets environmental regulations. With a maximum power dissipation of 450mW and a junction temperature rating of 150¬8C, it is designed for reliable operation in demanding conditions. The package type is MCPH4, and it is available in a minimum packing quantity of 3,000 pieces per reel.
RF Transistor NPN 12V 100mA 10GHz 450mW Surface Mount 4-MCPH
RF Transistor NPN 12V 100mA 10GHz 450mW Surface Mount 4-MCPH
RF Transistor NPN 12V 100mA 10GHz 450mW Surface Mount 4-MCPH
RF Transistor, NPN Single, 12 V, 100 mA, fT = 10 GHz, SC 82FL / MCPH4, 3000-REEL Product overview: MCH4015-TL-H from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12 V, 100 mA, 10 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 12 V, 100 mA, 10 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MCH4015-TL-H can be used for catalog matching and distributor lookup.
RF TRANS NPN 12V 10GHZ 4MCPH
RF Bipolar Transistors HIGH FREQUENCY AMPLIFIER
RF TRANS, NPN, 12V, 0.1A, 150DEG C; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10GHz; Power Dissipation Pd:450mW; DC Collector Current:100mA; DC Current Gain hFE:60hFE; RF Transistor RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | MCH4015-TL-HOSTR-ND | 283-MCH4015-TL-H | MCH4015-TL-H | MCH4015-TL-H | 07AH4111 |
| Product Name | Bipolar RF Transistors | 12 V 100 mA 10 GHz Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | RF Bipolar Transistors | Rf Trans, Npn, 12V, 0.1A, 150Deg C; Transistor Polarity Onsemi |
| Polarity | NPN | NPN | NPN | ||
| Package Type | SOT-343F | TO-3 | |||
| IC(max) | 100 milliamps | ||||
| VCEO | 12 volts | 12 volts | |||
| VCBO | 20 volts |
