onsemi Bipolar Transistor Arrays MC1413DR2G

Description
TRANS 7NPN DARL 50V 0.5A 16SOIC
Request a Quote Datasheet
Description
TRANS 7NPN DARL 50V 0.5A 16SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - MC1413DR2G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
MC1413DR2G
Bipolar Transistor Arrays MC1413DR2G
TRANS 7NPN DARL 50V 0.5A 16SOIC

TRANS 7NPN DARL 50V 0.5A 16SOIC

Supplier's Site Datasheet
Singapore
50V 0.5A SOIC Bipolar Transistor
277-MC1413DR2G
50V 0.5A SOIC Bipolar Transistor 277-MC1413DR2G
NPN Darlington Transistor 50V 0.5A SOIC Product overview: MC1413DR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-MC1413DR2G can be used for catalog matching and distributor lookup.

NPN Darlington Transistor 50V 0.5A SOIC Product overview: MC1413DR2G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, SOIC, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-MC1413DR2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - MC1413DR2G - 022584-MC1413DR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - MC1413DR2G
022584-MC1413DR2G
TRANSISTORS - Transistors (BJT) - Arrays - MC1413DR2G 022584-MC1413DR2G
Manufacturer: ON Semiconductor Win Source Part Number: 022584-MC1413DR2G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 7 NPN Darlington Family Name: MC1413D Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-SOIC Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Alternative Parts (Cross-Reference): ULN2003D1; ULN2004D1; ULN2001D1; ULN2004D1TR; Introduction Date: January 15, 1997 ECCN: EAR99 Country of Origin: China, Philippines , United States of America Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 022584-MC1413DR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 7 NPN Darlington
Family Name: MC1413D
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-SOIC
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Alternative Parts (Cross-Reference): ULN2003D1; ULN2004D1; ULN2001D1; ULN2004D1TR;
Introduction Date: January 15, 1997
ECCN: EAR99
Country of Origin: China, Philippines , United States of America
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays - MC1413DR2GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
MC1413DR2GOSCT-ND
Bipolar Transistor Arrays MC1413DR2GOSCT-ND
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Buy Now Datasheet
Bipolar Transistor Arrays - MC1413DR2GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
MC1413DR2GOSDKR-ND
Bipolar Transistor Arrays MC1413DR2GOSDKR-ND
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Buy Now Datasheet
Bipolar Transistor Arrays - MC1413DR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
MC1413DR2GOSTR-ND
Bipolar Transistor Arrays MC1413DR2GOSTR-ND
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Buy Now Datasheet
Transistor Array, Npn/pnp, 1.1V, Soic; Transistor Polarity Onsemi - 50AC5978 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Npn/pnp, 1.1V, Soic; Transistor Polarity Onsemi
50AC5978
Transistor Array, Npn/pnp, 1.1V, Soic; Transistor Polarity Onsemi 50AC5978
TRANSISTOR ARRAY, NPN/PNP, 1.1V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.1V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No. of Pins:16Pins;RoHS Compliant: Yes

TRANSISTOR ARRAY, NPN/PNP, 1.1V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.1V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No. of Pins:16Pins;RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 18700247 - Radwell International
Willingboro, NJ, United States
Transistor
18700247
Transistor 18700247
TRANSISTOR, 7NPN, DARL, 50V, 0.5A, SOIC-16. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, 7NPN, DARL, 50V, 0.5A, SOIC-16. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free - 70099872 - Allied Electronics, Inc.
Fort Worth, TX, USA
High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free
70099872
High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free 70099872
High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free

High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MC1413DR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MC1413DR2G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MC1413DR2G
TRANS 7NPN DARL 50V 0.5A 16SOIC

TRANS 7NPN DARL 50V 0.5A 16SOIC

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Darlington Transistor Arrays
MC1413DR2G
Triode/MOS Tube/Transistor >> Darlington Transistor Arrays MC1413DR2G
七路 SOIC-16 Darlington Transistor Arrays ROHS

七路 SOIC-16 Darlington Transistor Arrays ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
MC1413DR2G
Darlington Transistors MC1413DR2G
Darlington Transistors High Voltage High Current Darlington

Darlington Transistors High Voltage High Current Darlington

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Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Newark, An Avnet Company Radwell International Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Bipolar RF Transistors Darlington Transistors Transistors Transistors RF Transistors Transistors Bipolar RF Transistors Darlington Transistors Darlington Transistors
Product Number MC1413DR2G 277-MC1413DR2G 022584-MC1413DR2G MC1413DR2GOSCT-ND 50AC5978 18700247 70099872 MC1413DR2G MC1413DR2G MC1413DR2G
Product Name Bipolar Transistor Arrays 50V 0.5A SOIC Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays - MC1413DR2G Bipolar Transistor Arrays Transistor Array, Npn/pnp, 1.1V, Soic; Transistor Polarity Onsemi Transistor High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free Discrete Semiconductor Products - Transistors - Bipolar (BJT) Triode/MOS Tube/Transistor >> Darlington Transistor Arrays Darlington Transistors
Polarity 7 NPN Darlington; NPN NPN NPN; 7 NPN Darlington NPN NPN; PNP
Package Type 16-SOIC (0.154", 3.90mm Width) SOT3; 16-SOIC "16-SOIC (0.154"", 3.90mm Width)" TO-3 SOIC-16
IC(max) 500 milliamps 500 milliamps 500 milliamps 500 milliamps
VCEO 50 volts 50 volts 50 volts 50 volts
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