onsemi Transistor MC1413DG

Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, 7NPN, DARL, 50V, 0.5A, SOIC-16. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet
Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, 7NPN, DARL, 50V, 0.5A, SOIC-16. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 18700243 - Radwell International
Willingboro, NJ, United States
Transistor
18700243
Transistor 18700243
DISCONTINUED BY MANUFACTURER, TRANSISTOR, 7NPN, DARL, 50V, 0.5A, SOIC-16. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, 7NPN, DARL, 50V, 0.5A, SOIC-16. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Bipolar Transistor Arrays - MC1413DG - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
MC1413DG
Bipolar Transistor Arrays MC1413DG
TRANS 7NPN DARL 50V 0.5A 16SO

TRANS 7NPN DARL 50V 0.5A 16SO

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - MC1413DG - 1073181-MC1413DG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - MC1413DG
1073181-MC1413DG
TRANSISTORS - Transistors (BJT) - Arrays - MC1413DG 1073181-MC1413DG
Manufacturer: ON Semiconductor Win Source Part Number: 1073181-MC1413DG Packaging: Tube/Rail Mounting: SMD (SMT) Transistor Polarity: 7 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-SOIC Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1073181-MC1413DG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Transistor Polarity: 7 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-SOIC
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays - MC1413DGOS-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
MC1413DGOS-ND
Bipolar Transistor Arrays MC1413DGOS-ND
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
MC1413DG
Darlington Transistors MC1413DG
Darlington Transistors High Voltage High Current Darlington

Darlington Transistors High Voltage High Current Darlington

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MC1413DG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MC1413DG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MC1413DG
TRANS 7NPN DARL 50V 0.5A 16SO

TRANS 7NPN DARL 50V 0.5A 16SO

Supplier's Site

Technical Specifications

  Radwell International ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Transistors Transistors Darlington Transistors Bipolar RF Transistors
Product Number 18700243 MC1413DG 1073181-MC1413DG MC1413DGOS-ND MC1413DG MC1413DG
Product Name Transistor Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - MC1413DG Bipolar Transistor Arrays Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity 7 NPN Darlington; NPN NPN; 7 NPN Darlington NPN
Package Type 16-SOIC (0.154", 3.90mm Width) SOT3; 16-SOIC "16-SOIC (0.154"", 3.90mm Width)"
IC(max) 500 milliamps 500 milliamps
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