onsemi Bipolar Transistors MBT3906DW1T1G

Description
Transistor Dual PNP 40V 200mA SOT363
Request a Quote Datasheet
Description
Transistor Dual PNP 40V 200mA SOT363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistors - 7916075 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
7916075
Bipolar Transistors 7916075
Transistor Dual PNP 40V 200mA SOT363

Transistor Dual PNP 40V 200mA SOT363

Supplier's Site
Bipolar Transistors - 7916075P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
7916075P
Bipolar Transistors 7916075P
Transistor Dual PNP 40V 200mA SOT363

Transistor Dual PNP 40V 200mA SOT363

Supplier's Site
Bipolar Transistors - 1453575 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1453575
Bipolar Transistors 1453575
Transistor Dual PNP 40V 200mA SOT363

Transistor Dual PNP 40V 200mA SOT363

Supplier's Site
TRANSISTORS - Transistors (BJT) - Arrays - MBT3906DW1T1G - 022476-MBT3906DW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - MBT3906DW1T1G
022476-MBT3906DW1T1G
TRANSISTORS - Transistors (BJT) - Arrays - MBT3906DW1T1G 022476-MBT3906DW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 022476-MBT3906DW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 400mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 022476-MBT3906DW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min): 100 @ 10mA, 1V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays - MBT3906DW1T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
MBT3906DW1T1GOSTR-ND
Bipolar Transistor Arrays MBT3906DW1T1GOSTR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays - MBT3906DW1T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
MBT3906DW1T1GOSCT-ND
Bipolar Transistor Arrays MBT3906DW1T1GOSCT-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays - MBT3906DW1T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
MBT3906DW1T1GOSDKR-ND
Bipolar Transistor Arrays MBT3906DW1T1GOSDKR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 150mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Singapore, Singapore
Dual 40V 200mA 250MHz Bipolar Transistor
277-MBT3906DW1T1G
Dual 40V 200mA 250MHz Bipolar Transistor 277-MBT3906DW1T1G
Dual PNP BJT Transistor, 40V, 200mA, 250MHz, SOT-363 Product overview: MBT3906DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40V, 200mA, 250MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 40V, 200mA, 250MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-MBT3906DW1T1G can be used for catalog matching and distributor lookup.

Dual PNP BJT Transistor, 40V, 200mA, 250MHz, SOT-363 Product overview: MBT3906DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40V, 200mA, 250MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 40V, 200mA, 250MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-MBT3906DW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor, Pnp, -40V; Transistor Polarity Onsemi - 88H4689 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Pnp, -40V; Transistor Polarity Onsemi
88H4689
Bipolar Transistor, Pnp, -40V; Transistor Polarity Onsemi 88H4689
BIPOLAR TRANSISTOR, PNP, -40V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; DC Collector Current:-200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:60hFE; No. of Pins:6Pins; Transistor Mounting:Surface MountRoHS Compliant: Yes

BIPOLAR TRANSISTOR, PNP, -40V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; DC Collector Current:-200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:60hFE; No. of Pins:6Pins; Transistor Mounting:Surface MountRoHS Compliant: Yes

Supplier's Site
Transistor, Pnp, -40V, -0.2A, Sot-363-6; Transistor Polarity Onsemi - 29X6036 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Pnp, -40V, -0.2A, Sot-363-6; Transistor Polarity Onsemi
29X6036
Transistor, Pnp, -40V, -0.2A, Sot-363-6; Transistor Polarity Onsemi 29X6036
TRANSISTOR, PNP, -40V, -0.2A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; DC Collector Current:-200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:30hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

TRANSISTOR, PNP, -40V, -0.2A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; DC Collector Current:-200mA; Power Dissipation Pd:150mW; DC Current Gain hFE:30hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MBT3906DW1T1G
Bipolar Transistors - BJT MBT3906DW1T1G
Bipolar Transistors - BJT SS GP XSTR PNP 40V

Bipolar Transistors - BJT SS GP XSTR PNP 40V

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
MBT3906DW1T1G
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT MBT3906DW1T1G
40V 150mW 100@10mA,1V 200mA 2PCSPNP SC-70-6(SOT-363) Bipolar Transistors - BJT ROHS

40V 150mW 100@10mA,1V 200mA 2PCSPNP SC-70-6(SOT-363) Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet
Bipolar Transistor Arrays - MBT3906DW1T1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
MBT3906DW1T1G
Bipolar Transistor Arrays MBT3906DW1T1G
TRANS 2PNP 40V 0.2A SC88/SC70-6

TRANS 2PNP 40V 0.2A SC88/SC70-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MBT3906DW1T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MBT3906DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MBT3906DW1T1G
TRANS 2PNP 40V 0.2A SC88/SC70-6

TRANS 2PNP 40V 0.2A SC88/SC70-6

Supplier's Site

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 7916075 7916075P 022476-MBT3906DW1T1G MBT3906DW1T1GOSTR-ND 277-MBT3906DW1T1G 88H4689 29X6036 MBT3906DW1T1G MBT3906DW1T1G MBT3906DW1T1G MBT3906DW1T1G
Product Name Bipolar Transistors Bipolar Transistors TRANSISTORS - Transistors (BJT) - Arrays - MBT3906DW1T1G Bipolar Transistor Arrays Dual 40V 200mA 250MHz Bipolar Transistor Bipolar Transistor, Pnp, -40V; Transistor Polarity Onsemi Transistor, Pnp, -40V, -0.2A, Sot-363-6; Transistor Polarity Onsemi Bipolar Transistors - BJT Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; 2 PNP (Dual) PNP PNP PNP PNP PNP 2 PNP (Dual); PNP
Package Type Sot-363 (sc-88) SOT-363 SOT3; SC-88/SC70-6/SOT-363 6-TSSOP, SC-88, SOT-363 TO-3 TO-3; SOT3 6-TSSOP, SC-88, SOT-363
Number of units in IC 2
IC(max) 200 milliamps -200 milliamps 200 milliamps 200 milliamps 200 milliamps
VCEO 40 volts 40 volts 40 volts 40 volts
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