Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDSO8
Dual Op Amp, 1MHz GBW, 16V, SOIC-8 Product overview: LM258DR2 from onsemi is an Operational Amplifier IC for signal conditioning, buffering, current sensing, analog measurement, filtering, and precision control. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 1MHz, 16V, SOIC. Search-friendly keywords include op amp, operational amplifier, buffer amplifier, current sense, Dual, 1MHz, 16V, SOIC, Operational Amplifier IC, OP Amps, Buffer Amps ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 687-LM258DR2 can be used for catalog matching and distributor lookup.
IC OPAMP DUAL LOW POWER 8SOIC
General Purpose Amplifier 2 Circuit 8-SOIC
IC OPAMP DUAL LOW POWER 8SOIC
IC OPAMP DUAL LOW POWER 8SOIC
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Operational Amplifiers | Operational Amplifiers | Operational Amplifiers | Operational Amplifiers | Operational Amplifiers | Operational Amplifiers |
| Product Number | LM258DR2 | 687-LM258DR2 | LM258DR2OSTR-ND | LM258DR2 | LM258DR2 | LM258DR2 |
| Product Name | Dual 1MHz 16V SOIC Operational Amplifier IC | Instrumentation, Op Amps, Buffer Amps | Instrumentation, OP Amps, Buffer Amps | Integrated Circuits (ICs) - Linear - Amplifiers | Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps | |
| Standards | RoHS | RoHS | ||||
| Package Type | SOP; SOP8 | Tape and Reel | SOIC; "8-SOIC (0.154"", 3.90mm Width)" | SOIC; 8-SOIC (0.154\", 3.90mm Width) | Surface Mount | |
| Life Cycle Stage | Obsolete | Removed; Obsolete | Removed | |||
| Supply Voltage (VS) | 16 volts | 3 volts | ||||
| Slew Rate | 0.6000 V/µs |
