onsemi Memory LE24CB642M-TLM-E

Description
EEPROM Memory IC 64Kb (8K x 8) I²C 400kHz 900ns 8-MFP
Request a Quote Datasheet
Description
EEPROM Memory IC 64Kb (8K x 8) I²C 400kHz 900ns 8-MFP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - LE24CB642M-TLM-E-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 64Kb (8K x 8) I²C 400kHz 900ns 8-MFP

EEPROM Memory IC 64Kb (8K x 8) I²C 400kHz 900ns 8-MFP

Buy Now Datasheet
IC EEPROM 64KBIT I2C 400KHZ 8MFP

IC EEPROM 64KBIT I2C 400KHZ 8MFP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - LE24CB642M-TLM-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
LE24CB642M-TLM-E
Integrated Circuits (ICs) - Memory - Memory LE24CB642M-TLM-E
IC EEPROM 64KBIT I2C 400KHZ 8MFP

IC EEPROM 64KBIT I2C 400KHZ 8MFP

Supplier's Site
Memory - LE24CB642M-TLM-E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 64Kbit I²C 400 kHz 900 ns 8-MFP

EEPROM Memory IC 64Kbit I²C 400 kHz 900 ns 8-MFP

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number LE24CB642M-TLM-E-ND LE24CB642M-TLM-E LE24CB642M-TLM-E LE24CB642M-TLM-E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type SOIC; "8-SOIC (0.173"", 4.40mm Width)" SOIC; 8-SOIC (0.173\", 4.40mm Width)
Supply Voltage 2.7V ~ 5.5V Surface Mount 2.7V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420776 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - 71024S12Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details