onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors KSP10TA

Win Source Part Number: 1382442-KSP10TA
Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar RF Transistors
Package: Cut Tape (CT)Tape & Box (TB)
Standard Package: 2,000 pcs
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: ON Semiconductor
Base Product Number: KSP10
Moisture Sensitivity Level (MSL): Not Applicable

RF NPN BJT Transistor 25V 100mA 650MHz TO-92 Product overview: KSP10TA from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 100mA, 650MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, 100mA, 650MHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-KSP10TA can be used for catalog matching and distributor lookup.

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